- 您现在的位置：买卖IC网 > PDF目录166215 > AM29F800BT-70ED (SPANSION LLC) Flash Memory IC; Memory Size:8Mbit; Memory Configuration:512K x 16 / 1M x 8; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns RoHS Compliant: Yes PDF资料下载
参数资料
| 型号： | AM29F800BT-70ED |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | Flash Memory IC; Memory Size:8Mbit; Memory Configuration:512K x 16 / 1M x 8; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns RoHS Compliant: Yes |
| 中文描述： | 512K X 16 FLASH 5V PROM, 70 ns, PDSO48 |
| 封装： | LEAD FREE, MO-142DD, TSOP-48 |
| 文件页数： | 20/45页 |
| 文件大小： | 1402K |
| 代理商： | AM29F800BT-70ED |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页当前第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页
March 3, 2009 21504E6
Am29F800B
25
D A TA SH EE T
DC CHARACTERISTICS
CMOS Compatible
Notes:
1. ICC active while Embedded Erase or Embedded Program is in progress.
2. Maximum ICC specifcations are tested with VCC = VCCmax
3. Not 100% tested.
Parameter
Description
Test Conditions
Min
Typ
Max
Unit
ILI
Input Load Current
VIN = VSS to VCC,
VCC = VCC max
±1.0
A
ILIT
A9, OE#, RESET Input Load
Current
VCC = VCC max,
A9 = OE# = RESET = 12.5 V
35
A
ILO
Output Leakage Current
VOUT = VSS to VCC,
VCC = VCC max
±1.0
A
ICC1
VCC Active Read Current
CE# = VIL, OE# = VIH,
f = 5 MHz
Byte Mode
20
40
mA
CE# = VIL, OE# = VIH,
f = 5 MHz
Word Mode
28
50
mA
ICC2
VCC Active Write Current
CE# = VIL, OE# = VIH
30
50
mA
ICC3
CE# and RESET# = VCC±0.5 V,
OE# = VIH
0.3
5
A
VIL
Input Low Voltage
–0.5
0.8
V
VIH
Input High Voltage
0.7 x VCC
VCC + 0.3
V
VID
Voltage for Autoselect and
Temporary Sector Unprotect
VCC = 5.0 V
11.5
12.5
V
VOL
Output Low Voltage
IOL = 5.8 mA, VCC = VCC min
0.45
V
VOH1
Output High Voltage
IOH = –2.5 mA, VCC = VCC min
0.85 VCC
V
VOH2
IOH = –100 A, VCC = VCC min
VCC–0.4
V
VLKO
Low VCC Lock-Out Voltage
3.2
4.2
V
相关PDF资料 |
PDF描述 |
|---|---|
| AM29F800BT-90ED | Flash Memory IC; Memory Size:8Mbit; Memory Configuration:512K x 16 / 1M x 8; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns RoHS Compliant: Yes |
| AM29F800BT-90EF | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes |
| AM29F800BT-90SD | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:44-SOIC; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes |
| AM29F800BB-120EC | Dual Retriggerable Monostable Multivibrators 16-VQFN -40 to 85 |
| AM29F800BB-55EF | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:55ns; Series:AM29 RoHS Compliant: Yes |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29F800BT-70ED | 制造商:Spansion 功能描述:FLASH MEMORY IC |
| AM29F800BT70EF | 制造商: 功能描述: 制造商:undefined 功能描述: |
| AM29F800BT-70EF | 功能描述:闪存 8M (1MX8/512KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AM29F800BT-70EF/T | 制造商:Spansion 功能描述:8M (1MX8/512KX16) 5V, BOOT BLOCK, TOP, TSOP48, IND, HAZMAT - Tape and Reel |
| AM29F800BT-70EF\\T | 制造商:Spansion 功能描述:IC 8MEG(512K16)BOTTOM SECTOR 100K(CS39S) |
发布紧急采购，3分钟左右您将得到回复。