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参数资料
型号： AM29F800BT-70ED
厂商： SPANSION LLC
元件分类： PROM
英文描述： Flash Memory IC; Memory Size:8Mbit; Memory Configuration:512K x 16 / 1M x 8; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns RoHS Compliant: Yes
中文描述： 512K X 16 FLASH 5V PROM, 70 ns, PDSO48
封装： LEAD FREE, MO-142DD, TSOP-48
文件页数： 39/45页
文件大小： 1402K
代理商： AM29F800BT-70ED
42
Am29F800B
21504E6 March 3, 2009
D A TA SH EE T
REVISION SUMMARY (Continued)
Revision D (January 1999)
Distinctive Characteristics
Added the 20-year data retention subbullet.
Ordering Information
Optional Processing: Deleted “B = Burn-in”.
DC Characteristics—TTL/NMOS Compatible
ILIT: Added OE# and RESET to the Description column.
Changed “A9 = 12.5 V” to “A9 = OE# = RESET = 12.5
V” in the Test Conditions column.
I LO, ICC1 , I CC2 : Deleted “V CC = V CC max” in
Test Conditions.
ICC3: Added Note 4, “ICC3 = 20 A max at extended
temperatures (>+85°C)”.
DC Characteristics—CMOS Compatible
ILIT: Added OE# and RESET to the Description column.
Changed “A9 = 12.5 V” to “A9 = OE# = RESET = 12.5
V” in the Test Conditions column.
ICC1, ICC2, ICC3: Deleted “VCC = VCCmax”; added
Note 2 “Maximum ICC specifications are tested with
VCC = VCCmax”.
Revision D+1 (March 23, 1999)
Command Definitions table
Corrected SA definition in legend; range should be
A18–A12. In Note 4, A17 should be A18.
Revision D+2 (July 2, 1999)
Global
Added references to availability of device in Known
Good Die (KGD) form.
Revision E (November 16, 1999)
AC Characteristics—Figure 13. Program
Operations Timing and Figure 14. Chip/Sector
Erase Operations
Deleted tGHWL and changed OE# waveform to start at
high.
Physical Dimensions
Replaced figures with more detailed illustrations.
Revision E+1 (August 4, 2000)
Global
Added FBGA package.
Revision E+2 (June 4, 2004)
Ordering Information
Added Pb-Free OPNs.
Revision E3 (December 22, 2005)
Global
Deleted reverse TSOP package option and 150 ns
speed option.
Revision E4 (May 19, 2006)
Added “Not recommended for new designs” note.
AC Characteristics
Changed tBUSY specification to maximium value.
Revision E5 (November 2, 2006)
Deleted “Not recommended for new designs” note.
Revision E6 (March 3, 2009)
Global
Added obsolescence information.
相关PDF资料
PDF描述
AM29F800BT-90ED Flash Memory IC; Memory Size:8Mbit; Memory Configuration:512K x 16 / 1M x 8; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns RoHS Compliant: Yes
AM29F800BT-90EF Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes
AM29F800BT-90SD Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:44-SOIC; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes
AM29F800BB-120EC Dual Retriggerable Monostable Multivibrators 16-VQFN -40 to 85
AM29F800BB-55EF Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:55ns; Series:AM29 RoHS Compliant: Yes
相关代理商/技术参数
参数描述
AM29F800BT-70ED 制造商:Spansion 功能描述:FLASH MEMORY IC
AM29F800BT70EF 制造商: 功能描述: 制造商:undefined 功能描述:
AM29F800BT-70EF 功能描述:闪存 8M (1MX8/512KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
AM29F800BT-70EF/T 制造商:Spansion 功能描述:8M (1MX8/512KX16) 5V, BOOT BLOCK, TOP, TSOP48, IND, HAZMAT - Tape and Reel
AM29F800BT-70EF\\T 制造商:Spansion 功能描述:IC 8MEG(512K16)BOTTOM SECTOR 100K(CS39S)
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