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| 型号： | AM29F800BT-70ED |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | Flash Memory IC; Memory Size:8Mbit; Memory Configuration:512K x 16 / 1M x 8; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns RoHS Compliant: Yes |
| 中文描述： | 512K X 16 FLASH 5V PROM, 70 ns, PDSO48 |
| 封装： | LEAD FREE, MO-142DD, TSOP-48 |
| 文件页数： | 38/45页 |
| 文件大小： | 1402K |
| 代理商： | AM29F800BT-70ED |
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March 3, 2009 21504E6
Am29F800B
41
D A TA SH EE T
REVISION SUMMARY
Revision A (August 1997)
Initial release.
Revision B (October 1997)
Global
Added -55 speed option. Changed data sheet designa-
tion from Advance Information to Preliminary.
Sector Protection/Unprotection
Corrected text to indicate that these functions can only
be implemented using programming equipment.
Table 1, Device Bus Operations
Revised to indicate inputs for both CE# and RESET#
are required for standby mode.
Program Command Sequence
Changed to indicate Data# Polling is active for 2 s
after a program command sequence if the sector spec-
ified is protected.
Sector Erase Command Sequence and DQ3: Sector
Erase Timer
Corrected sector erase timeout to 50 s.
Erase Suspend Command
Changed to indicate that the device suspends the
erase operation a maximum of 20 s after the rising
edge of WE#.
DC Characteristics
Changed to indicate VID min and max values are 11.5
to 12.5 V, with a VCC test condition of 5.0 V. Added
typical values to TTL table. Revised CMOS typical
standby current (ICC3).
Figure 14: Chip/Sector Erase Operation Timings;
Figure 19: Alternate CE# Controlled Write
Operation TImings
Corrected hexadecimal values in address and data
waveforms. In Figure 19, corrected data values for chip
and sector erase.
Erase and Programming Performance
Corrected word and chip programming times.
Revision C (January 1998)
Global
Formatted for consistency with other 5.0 volt-only
data sheets.
Revision C+1 (April 1998)
Distinctive Characteristics
Changed typical program/erase current to 30 mA to
match the CMOS DC Characteristics table.
Changed minimum endurance to 1 million write cycles
per sector guaranteed.
AC Characteristics
Erase/Program Operations: Corrected the notes refer-
ence for tWHWH1 and tWHWH2. These parameters are
100% tested. Changed tDS and tCP specifications for 55
ns device. Changed tWHWH1 word mode specification
to 12 s.
Alternate CE# Controlled Erase/Program Operations:
Corrected the notes reference for tWHWH1 and tWHWH2.
These parameters are 100% tested. Changed tDS and
tCP specifications for 55 ns device. Changed tWHWH1
word mode specification to 12 s.
Temporary Sector Unprotect Table
Added note reference for tVIDR. This parameter is not
100% tested.
Erase and Programming Performance
In Notes 1 and 6, changed the endurance specification
to 1 million cycles.
Revision C+2 (April 1998)
Product Selector Guide
Deleted the -55 speed option for VCC = 5.0 V ± 5%.
Added the -55 speed option for VCC = 5.0 V ± 10%.
Ordering Information
Va lid Combinations fo r Am29F800BT-5 5 and
Am29F800BB-55: Added the extended temperature
range for all package types.
Operating Ranges
VCC Supply Voltages: Deleted “VCC for ± 5% devices .
. . . +4.75 V to +5.25 V”. Changed “VCC for ±10%
devices . . . . +4.5 V to +5.5 V” to “VCC for all devices .
. . . +4.5 V to +5.5 V”.
Erase and Programming Performance
Note 2: Deleted “(4.75 V for -55)”.
相关PDF资料 |
PDF描述 |
|---|---|
| AM29F800BT-90ED | Flash Memory IC; Memory Size:8Mbit; Memory Configuration:512K x 16 / 1M x 8; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns RoHS Compliant: Yes |
| AM29F800BT-90EF | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes |
| AM29F800BT-90SD | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:44-SOIC; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes |
| AM29F800BB-120EC | Dual Retriggerable Monostable Multivibrators 16-VQFN -40 to 85 |
| AM29F800BB-55EF | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:55ns; Series:AM29 RoHS Compliant: Yes |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29F800BT-70ED | 制造商:Spansion 功能描述:FLASH MEMORY IC |
| AM29F800BT70EF | 制造商: 功能描述: 制造商:undefined 功能描述: |
| AM29F800BT-70EF | 功能描述:闪存 8M (1MX8/512KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AM29F800BT-70EF/T | 制造商:Spansion 功能描述:8M (1MX8/512KX16) 5V, BOOT BLOCK, TOP, TSOP48, IND, HAZMAT - Tape and Reel |
| AM29F800BT-70EF\\T | 制造商:Spansion 功能描述:IC 8MEG(512K16)BOTTOM SECTOR 100K(CS39S) |
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