参数资料
型号: AM29LV004BB-90ED
厂商: SPANSION LLC
元件分类: PROM
英文描述: Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes
中文描述: 512K X 8 FLASH 3V PROM, 90 ns, PDSO40
封装: LEAD FREE, MO-142CD, TSOP-40
文件页数: 10/39页
文件大小: 681K
代理商: AM29LV004BB-90ED
18
Am29LV004B
21522D5 October 11, 2006
D A TA SH EE T
Command Definitions
Table 5.
Am29LV004B Command Definitions
Legend:
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed.
Addresses latch on the falling edge of the WE# or CE# pulse,
whichever happens later.
PD = Data to be programmed at location PA. Data latches on the
rising edge of WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A18–A13 uniquely select any sector.
Notes:
1. See Table 1 for description of bus operations.
2. All values are in hexadecimal.
3. Except when reading array or autoselect data, all command
bus cycles are write operations.
4. Address bits A18–A11 are don’t cares for unlock and
command cycles.
5. No unlock or command cycles required when reading array
data.
6. The Reset command is required to return to reading array
data when device is in the autoselect mode, or if DQ5 goes
high (while the device is providing status data).
7. The fourth cycle of the autoselect command sequence is a
read cycle.
8. The data is 00h for an unprotected sector and 01h for a
protected sector. See “Autoselect Command Sequence” for
more information.
9. The Unlock Bypass command is required prior to the Unlock
Bypass Program command.
10. The Unlock Bypass Reset command is required to return to
reading array data when the device is in the unlock bypass
mode.
11. The system may read and program in non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend
mode. The Erase Suspend command is valid only during a
sector erase operation.
12. The Erase Resume command is valid only during the Erase
Suspend mode.
Command
Sequence
Cy
c
les
Bus Cycles (Notes 2-4)
First
Second
Third
Fourth
Fifth
Sixth
Addr
Data
Addr
Data
Addr
Data Addr
Data
Addr Data
Addr
Data
1
RA
RD
Reset (Note 6)
1
XXX
F0
Auto-
select
Manufacturer ID
4
555
AA
2AA
55
555
90
X00
01
Device ID, Top Boot Block
4
555
AA
2AA
55
555
90
X01
B5
Device ID, Bottom Boot Block
4
555
AA
2AA
55
555
90
X01
B6
Sector Protect Verify
4
555
AA
2AA
55
555
90
(SA)
X02
00
01
Program
4
555
AA
2AA
55
555
A0
PA
PD
Unlock Bypass
3
555
AA
2AA
55
555
20
Unlock Bypass Program (Note 9)
2
XXX
A0
PA
PD
Unlock Bypass Reset (Note 10)
2
XXX
90
XXX
00
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Sector Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SA
30
Erase Suspend (Note 11)
1
XXX
B0
Erase Resume (Note 12)
1
XXX
30
相关PDF资料
PDF描述
AM29LV004BB-90EF Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes
AM29LV004BT-120ED Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes
AM29LV004BT-120EF Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes
AM29LV004BT-70ED Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes
AM29LV004BT-70EF Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes
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