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参数资料
型号： AM29LV004BB-90ED
厂商： SPANSION LLC
元件分类： PROM
英文描述： Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes
中文描述： 512K X 8 FLASH 3V PROM, 90 ns, PDSO40
封装： LEAD FREE, MO-142CD, TSOP-40
文件页数： 31/39页
文件大小： 681K
代理商： AM29LV004BB-90ED
21522D5 October 11, 2006
Am29LV004B
37
D A TA SH EE T
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°C, 3.0 V V
CC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
Table 5 for further information on command definitions.
6. The device has a minimum guaranteed erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.
TSOP AND SO PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.7
15
s
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
7
s
Byte Programming Time
9
300
s
Excludes system level
overhead (Note 5)
Chip Programming Time
(Note 3)
4.5
13.5
s
Description
Min
Max
Input voltage with respect to VSS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to VSS on all I/O pins
–1.0 V
VCC + 1.0 V
VCC Current
–100 mA
+100 mA
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
6
7.5
pF
COUT
Output Capacitance
VOUT = 0
8.5
12
pF
CIN2
Control Pin Capacitance
VIN = 0
7.5
9
pF
Parameter
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°C10
Years
125
°C20
Years
相关PDF资料
PDF描述
AM29LV004BB-90EF Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes
AM29LV004BT-120ED Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes
AM29LV004BT-120EF Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes
AM29LV004BT-70ED Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes
AM29LV004BT-70EF Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes
相关代理商/技术参数
参数描述
am29lv004bt-120ed 制造商:Advanced Micro Devices 功能描述:
AM29LV004BT-90EI 制造商:Advanced Micro Devices 功能描述:
AM29LV008BB-120ECT 制造商:Spansion 功能描述:IC 8MEG X8, 3 V FLASH BOTTOM B
AM29LV008BB-120ED 制造商:Spansion 功能描述:IC SM FLASH 3V 8MB
AM29LV008BB-120ED 制造商:Spansion 功能描述:FLASH MEMORY IC
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