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参数资料
| 型号： | AM29LV004BB-90ED |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes |
| 中文描述： | 512K X 8 FLASH 3V PROM, 90 ns, PDSO40 |
| 封装： | LEAD FREE, MO-142CD, TSOP-40 |
| 文件页数： | 33/39页 |
| 文件大小： | 681K |
| 代理商： | AM29LV004BB-90ED |
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21522D5 October 11, 2006
Am29LV004B
39
D A TA SH EE T
REVISION SUMMARY
Revision A (January 1998)
Initial release.
Revision B (June 1998)
Expanded data sheet from Advanced Information to
Preliminary version.
Distinctive Characteristics
Changed “Manufactured on 0.35 m process technology”
to “Manufactured on 0.32 m process technology”.
General Description
Second paragraph: Changed “This device is manufac-
tured using AMD’s 0.35 m process technology” to
“This device is manufactured using AMD’s 0.32 m
process technology”.
Revision C (January 1999)
Global
Removed the -80 speed option.
Distinctive Characteristics
Added bullet for 20-year data retention at 125
°C.
DC Characteristics—CMOS Compatible
ICC1, ICC2, ICC3, ICC4, ICC5: Added Note 2 “Maximum
ICC specifications are tested with VCC = VCCmax”.
Revision D (November 18, 1999)
AC Characteristics—Figure 15. Program
Operations Timing and Figure 16. Chip/Sector
Erase Operations
Deleted tGHWL and changed OE# waveform to start at
high.
Physical Dimensions
Replaced figures with more detailed illustrations.
Revision D+1 (November 13, 2000)
Global
Added table of contents. Deleted burn-in option from
Ordering Information section.
Revision D+2 (March 9, 2005)
Ordering Information
Added temperature ranges for D, F, and K. Added valid
combinations ED, EF, and EK.
Revision D+3 (January 10, 2006)
Global
Removed Reverse TSOP
Revision D+4 (September 12, 2006)
Erase and Program Operations table
Changed tBUSY to a maximum specification.
Revision D5 (October 11, 2006)
Global
Added notice on product availability.
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without limita-
tion, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as con-
templated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the
public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility,
aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for
any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion Inc. will not be liable
to you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor
devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design
measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating
conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign
Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the prior au-
thorization by the respective government entity will be required for export of those products.
Trademarks
Copyright 1998–2005 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trade-
marks of Advanced Micro Devices, Inc. ExpressFlash is a trademark of Advanced Micro Devices, Inc. Product names used in this publication are
for identification purposes only and may be trademarks of their respective companies.
Copyright 2006 Spansion Inc. All Rights Reserved. Spansion, the Spansion logo, MirrorBit, ORNAND, HD-SIM, and combinations thereof are
trademarks of Spansion Inc. Other names are for informational purposes only and may be trademarks of their respective owners.
相关PDF资料 |
PDF描述 |
|---|---|
| AM29LV004BB-90EF | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes |
| AM29LV004BT-120ED | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes |
| AM29LV004BT-120EF | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes |
| AM29LV004BT-70ED | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes |
| AM29LV004BT-70EF | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes |
相关代理商/技术参数 |
参数描述 |
|---|---|
| am29lv004bt-120ed | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV004BT-90EI | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV008BB-120ECT | 制造商:Spansion 功能描述:IC 8MEG X8, 3 V FLASH BOTTOM B |
| AM29LV008BB-120ED | 制造商:Spansion 功能描述:IC SM FLASH 3V 8MB |
| AM29LV008BB-120ED | 制造商:Spansion 功能描述:FLASH MEMORY IC |
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