参数资料
型号: Am29LV400B-90RWAEB
厂商: Advanced Micro Devices, Inc.
英文描述: CAP 0.47UF 50V +50-20% X7R SMD-0612 TR-7 PLATED-NI/SN HC-FEEDTHRU
中文描述: 4兆位(512亩x 8-Bit/256亩x 16位),3.0伏的CMOS只引导扇区闪存
文件页数: 22/40页
文件大小: 516K
代理商: AM29LV400B-90RWAEB
29
Am29LV400
PR EL IMIN AR Y
AC CHARACTERISTICS
Erase/Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
Parameter
-90R
-100
-120
-150
JEDEC
Std.
Description
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
90
100
120
150
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tWLAX
tAH
Address Hold Time
Min
50
65
ns
tDVWH
tDS
Data Setup Time
Min
50
65
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
tGHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
50
65
ns
tWHWL
tWPH
Write Pulse Width High
Min
30
35
ns
tWHWH1
tWHWH1 Programming Operation (Note 2)
Byte
Typ
9
s
Word
Typ
11
tWHWH2
tWHWH2 Sector Erase Operation (Note 2)
Typ
0.7
sec
tVCS
VCC Setup Time (Note 1)
Min
50
s
tRB
Recovery Time from RY/BY#
Min
0
ns
tBUSY
Program/Erase Valid to RY/BY# Delay
Min
90
ns
相关PDF资料
PDF描述
Am29LV400BB70RWACB Ceramic Multilayer Capacitor; Capacitance:470pF; Capacitance Tolerance:+50, -20 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:1206; Series:W3F; Leaded Process Compatible:Yes
Am29LV400BB70RWAE 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Am29LV400BB70RWAEB 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV400BB70RWAC Ceramic Multilayer Capacitor; Capacitor Type:General Purpose; Capacitance:22pF; Capacitance Tolerance:, -20%; Voltage Rating:100VDC; Capacitor Dielectric Material:Multilayer Ceramic; Package/Case:1206; Termination:SMD RoHS Compliant: Yes
AM29LV400BT70RWAC 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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