参数资料
型号: Am29LV400B-90RWAEB
厂商: Advanced Micro Devices, Inc.
英文描述: CAP 0.47UF 50V +50-20% X7R SMD-0612 TR-7 PLATED-NI/SN HC-FEEDTHRU
中文描述: 4兆位(512亩x 8-Bit/256亩x 16位),3.0伏的CMOS只引导扇区闪存
文件页数: 27/40页
文件大小: 516K
代理商: AM29LV400B-90RWAEB
33
Am29LV400
PR EL IMIN AR Y
AC CHARACTERISTICS
Temporary Sector Unprotect
Note: Not 100% tested.
Parameter
All Speed Options
JEDEC
Std.
Description
Unit
tVIDR
VID Rise and Fall Time (See Note)
Min
500
ns
tRSP
RESET# Setup Time for Temporary Sector
Unprotect
Min
4
s
Note: The system may use OE# and CE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within an
erase-suspended sector.
20514C-24
Figure 20.
DQ2 vs. DQ6
Enter
Erase
Enter Erase
Suspend Program
Erase Suspend
Read
Erase Suspend
Read
Erase
WE#
DQ6
DQ2
Erase
Complete
Erase
Suspend
Program
Resume
Embedded
Erasing
RESET#
tVIDR
12 V
0 or 3 V
CE#
WE#
RY/BY#
tVIDR
tRSP
Program or Erase Command Sequence
0 or 3 V
20514C-25
Figure 21.
Temporary Sector Unprotect Timing Diagram
相关PDF资料
PDF描述
Am29LV400BB70RWACB Ceramic Multilayer Capacitor; Capacitance:470pF; Capacitance Tolerance:+50, -20 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:1206; Series:W3F; Leaded Process Compatible:Yes
Am29LV400BB70RWAE 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Am29LV400BB70RWAEB 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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AM29LV400BT70RWAC 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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