- 您现在的位置：买卖IC网 > PDF目录51256 > AO3403 (ALPHA AND OMEGA SEMICONDUCTOR) 2600 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET PDF资料下载
参数资料
| 型号： | AO3403 |
| 厂商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2600 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | GREEN PACKAGE-3 |
| 文件页数： | 1/5页 |
| 文件大小： | 494K |
| 代理商： | AO3403 |
AO3403
30V P-Channel MOSFET
General Description
Product Summary
VDS
ID (at VGS=-10V)
-2.6A
RDS(ON) (at VGS=-10V)
< 115m
RDS(ON) (at VGS =-4.5V)
< 150m
RDS(ON) (at VGS =-2.5V)
< 200m
Symbol
VDS
The AO3403 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. This device is
suitable for use as a load switch or in PWM applications.
V
Maximum
Units
Parameter
Absolute Maximum Ratings TA=25°C unless otherwise noted
-30V
Drain-Source Voltage
-30
SOT23
Top View
Bottom View
D
G
S
G
S
D
G
D
S
VDS
VGS
IDM
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
RθJL
Parameter
Typ
V
Max
0.9
TA=70°C
Junction and Storage Temperature Range
-55 to 150
±12
Gate-Source Voltage
°C/W
RθJA
70
100
90
°C
Thermal Characteristics
Units
-2.6
-2.2
-13
TA=70°C
Power Dissipation
B
PD
Pulsed Drain Current
C
Continuous Drain
Current
Drain-Source Voltage
-30
V
TA=25°C
W
1.4
TA=25°C
A
ID
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
°C/W
Maximum Junction-to-Ambient
A D
63
125
80
SOT23
Top View
Bottom View
D
G
S
G
S
D
G
D
S
Rev 10: Jan. 2011
www.aosmd.com
Page 1 of 5
相关PDF资料 |
PDF描述 |
|---|---|
| AO4404B | 8500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| AO4406AL | 13000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| AO4420 | 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| AO4433 | 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| AO4600L | 30 V, 0.027 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AO3403_11 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:30V P-Channel MOSFET |
| AO3403L | 制造商:AOS 功能描述:MOSFET |
| AO3404 | 制造商:AOS 功能描述:MOSFET |
| AO3404_11 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:30V N-Channel MOSFET |
| AO3404A | 功能描述:MOSFET N-CH 30V 5.8A SOT23 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
发布紧急采购，3分钟左右您将得到回复。