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参数资料
型号： AO3403
厂商： ALPHA AND OMEGA SEMICONDUCTOR
元件分类： 小信号晶体管
英文描述： 2600 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装： GREEN PACKAGE-3
文件页数： 2/5页
文件大小： 494K
代理商： AO3403
AO3403
Symbol
Min
Typ
Max
Units
BVDSS
-30
V
VDS=-30V, VGS=0V
-1
TJ=55°C
-5
IGSS
±100
nA
VGS(th)
Gate Threshold Voltage
-0.6
-1
-1.4
V
ID(ON)
-13
A
88
115
TJ=125°C
143
200
103
150
m
139
200
m
gFS
8
S
VSD
-0.78
-1
V
IS
-1.5
A
Ciss
260
315
pF
Coss
37
pF
Crss
20
pF
Rg
4
8
12
Qg(10V)
5.9
7.2
nC
Qg(4.5V)
2.8
3.5
nC
Qgs
0.7
nC
Qgd
1
nC
t
6
ns
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Total Gate Charge
VGS=-10V, VDS=-15V, ID=-2.6A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
RDS(ON)
Static Drain-Source On-Resistance
m
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Gate-Body leakage current
IS=-1A,VGS=0V
VDS=-5V, ID=-2.6A
VGS=-2.5V, ID=-1A
VGS=-4.5V, ID=-2A
Forward Transconductance
Diode Forward Voltage
VDS=VGS ID=-250A
VDS=0V, VGS= ±12V
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
IDSS
A
Zero Gate Voltage Drain Current
Drain-Source Breakdown Voltage
On state drain current
ID=-250A, VGS=0V
VGS=-10V, VDS=-5V
VGS=-10V, ID=-2.6A
Reverse Transfer Capacitance
VGS=0V, VDS=-15V, f=1MHz
SWITCHING PARAMETERS
tD(on)
6
ns
tr
3.5
ns
tD(off)
20
ns
tf
5
ns
trr
11.5
15
ns
Qrr
4.5
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge IF=-2.6A, dI/dt=100A/s
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-15V,
RL=5.76, RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time
IF=-2.6A, dI/dt=100A/s
A. The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation P
D is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialT
J=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev 10: Jan. 2011
www.aosmd.com
Page 2 of 5
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相关代理商/技术参数
参数描述
AO3403_11 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:30V P-Channel MOSFET
AO3403L 制造商:AOS 功能描述:MOSFET
AO3404 制造商:AOS 功能描述:MOSFET
AO3404_11 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:30V N-Channel MOSFET
AO3404A 功能描述:MOSFET N-CH 30V 5.8A SOT23 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
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