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参数资料
| 型号： | AO3416 |
| 厂商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 6500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | GREEN PACKAGE-3 |
| 文件页数： | 2/5页 |
| 文件大小： | 411K |
| 代理商： | AO3416 |
AO3416
Symbol
Min
Typ
Max
Units
BVDSS
20
V
VDS=20V, VGS=0V
1
TJ=55°C
5
IGSS
±10
A
VGS(th)
Gate Threshold Voltage
0.4
0.7
1.1
V
ID(ON)
30
A
16
22
TJ=125°C
22
30
18
26
m
21
34
m
gFS
50
S
VSD
0.62
1
V
IS
2
A
Ciss
1295
1650
pF
Coss
160
pF
Crss
87
pF
Rg
1.8
K
Qg
10
nC
Qgs
4.2
nC
Qgd
2.6
nC
tD(on)
280
ns
t
328
ns
Reverse Transfer Capacitance
VGS=0V, VDS=10V, f=1MHz
Forward Transconductance
VDS=VGS ID=250A
Zero Gate Voltage Drain Current
VDS=0V, VGS= ±8V
Gate-Body leakage current
VGS=2.5V, ID=5.5A
Drain-Source Breakdown Voltage
On state drain current
ID=250A, VGS=0V
VGS=4.5V, VDS=5V
VGS=4.5V, ID=6.5A
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
IDSS
A
VGS=1.8V, ID=5A
SWITCHING PARAMETERS
RDS(ON)
Static Drain-Source On-Resistance
Diode Forward Voltage
m
IS=1A,VGS=0V
VDS=5V, ID=6.5A
Gate resistance
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=10V, ID=6.5A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
V
=4.5V, V =10V, R =1.54
,
tr
328
ns
tD(off)
3.76
us
tf
2.24
us
trr
31
41
ns
Qrr
6.8
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
IF=6.5A, dI/dt=100A/s
Body Diode Reverse Recovery Time
Turn-Off Fall Time
Body Diode Reverse Recovery Charge IF=6.5A, dI/dt=100A/s
Turn-On Rise Time
Turn-Off DelayTime
VGS=4.5V, VDS=10V, RL=1.54,
RGEN=3
A. The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation P
D is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialT
J=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev 5: July 2010
www.aosmd.com
Page 2 of 5
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AO3416_104 | 功能描述:MOSFET N-CH 20V SOT23 制造商:alpha & omega semiconductor inc. 系列:- 零件状态:最後搶購 标准包装:3,000 |
| AO3416L | 制造商:Alpha & Omega Semiconductor 功能描述:Trans MOSFET N-CH 20V 6.5A 3-Pin SOT-23 |
| AO3418 | 功能描述:MOSFET N-CH 30V 3.8A SOT23 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| AO3418_101 | 功能描述:MOSFET N-CH 30V SOT23 制造商:alpha & omega semiconductor inc. 系列:- 零件状态:最後搶購 标准包装:3,000 |
| AO3418L | 制造商:Alpha & Omega Semiconductor 功能描述: |
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