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参数资料
| 型号： | AO3416 |
| 厂商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 6500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | GREEN PACKAGE-3 |
| 文件页数： | 3/5页 |
| 文件大小： | 411K |
| 代理商： | AO3416 |
AO3416
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
5
10
15
20
25
0
0.5
1
1.5
2
2.5
I D
(A
)
V
GS(Volts)
Figure 2: Transfer Characteristics (Note E)
10
15
20
25
30
0
2
4
6
8
10
R
D
S
(O
N
)
(m
)
I
D (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
1
1.2
1.4
1.6
0
25
50
75
100
125
150
175
N
o
rm
a
li
z
e
d
O
n
-R
e
s
is
ta
n
c
e
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
V
GS=4.5V
I
D=6.5A
V
GS=1.8V
I
D=5A
V
GS=2.5V
I
D=5.5A
25°C
125°C
V
DS=5V
V
GS=1.8V
V
GS=4.5V
0
5
10
15
20
25
30
0
1
2
3
4
5
I D
(A
)
V
DS (Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS=1.5V
2.5V
3.1V
4.5V
1.8V
V
GS=2.5V
40
0
5
10
15
20
25
0
0.5
1
1.5
2
2.5
I D
(A
)
V
GS(Volts)
Figure 2: Transfer Characteristics (Note E)
10
15
20
25
30
0
2
4
6
8
10
R
D
S
(O
N
)
(m
)
I
D (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
I S
(A
)
V
SD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
0.8
1
1.2
1.4
1.6
0
25
50
75
100
125
150
175
N
o
rm
a
li
z
e
d
O
n
-R
e
s
is
ta
n
c
e
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
V
GS=4.5V
I
D=6.5A
V
GS=1.8V
I
D=5A
V
GS=2.5V
I
D=5.5A
10
20
30
40
50
60
0
2
4
6
8
R
D
S
(O
N
)
(m
)
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
25°C
125°C
V
DS=5V
V
GS=1.8V
V
GS=4.5V
I
D=6.5A
25°C
125°C
0
5
10
15
20
25
30
0
1
2
3
4
5
I D
(A
)
V
DS (Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS=1.5V
2.5V
3.1V
4.5V
1.8V
V
GS=2.5V
Rev 5: July 2010
www.aosmd.com
Page 3 of 5
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AO3416_104 | 功能描述:MOSFET N-CH 20V SOT23 制造商:alpha & omega semiconductor inc. 系列:- 零件状态:最後搶購 标准包装:3,000 |
| AO3416L | 制造商:Alpha & Omega Semiconductor 功能描述:Trans MOSFET N-CH 20V 6.5A 3-Pin SOT-23 |
| AO3418 | 功能描述:MOSFET N-CH 30V 3.8A SOT23 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| AO3418_101 | 功能描述:MOSFET N-CH 30V SOT23 制造商:alpha & omega semiconductor inc. 系列:- 零件状态:最後搶購 标准包装:3,000 |
| AO3418L | 制造商:Alpha & Omega Semiconductor 功能描述: |
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