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参数资料
| 型号： | AO3419 |
| 厂商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | GREEN PACKAGE-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 168K |
| 代理商： | AO3419 |
Symbol
VDS
VGS
IDM
TJ, TSTG
Symbol
Typ
Max
65
90
85
125
RθJL
43
60
W
Maximum Junction-to-Lead
C
Steady-State
°C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t ≤ 10s
RθJA
°C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
±12
Gate-Source Voltage
Drain-Source Voltage
-20
Continuous Drain
Current
A
Maximum
Units
Parameter
TA=25°C
TA=70°C
Absolute Maximum Ratings TA=25°C unless otherwise noted
V
-2.8
-15
Pulsed Drain Current
B
Power Dissipation
A
TA=25°C
Junction and Storage Temperature Range
A
PD
°C
1.4
0.9
-55 to 150
TA=70°C
ID
-3.5
AO3419
20V P-Channel MOSFET
Product Summary
VDS (V) = -20V
ID = -3.5 A (VGS = -10V)
RDS(ON) < 75m (VGS = -10V)
RDS(ON) < 95m (VGS = -4.5V)
RDS(ON) < 145m (VGS = -2.5V)
ESD Rating: 2000V HBM
General Description
The AO3419 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. It is ESD protected.
SOT23
Top View
Bottom View
D
G
S
G
S
D
S
G
D
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AO3419_101 | 功能描述:MOSFET P-CH 20V SOT23 制造商:alpha & omega semiconductor inc. 系列:- 零件状态:最後搶購 标准包装:3,000 |
| AO3419L | 制造商:AOS 功能描述:MOSFET |
| AO3420 | 功能描述:MOSFET N-CH 20V 6A SOT23 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| AO3420_11 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:20V N-Channel MOSFET |
| AO3420L | 制造商:Alpha & Omega Semiconductor 功能描述: |
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