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参数资料
| 型号： | AO3434 |
| 厂商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | GREEN PACKAGE-3 |
| 文件页数： | 4/4页 |
| 文件大小： | 168K |
| 代理商： | AO3434 |
AO3434
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0
2
4
6
8
10
0
1
2
3
4
5
6
Qg (nC)
Figure 7: Gate-Charge Characteristics
V
G
S
(V
o
lt
s
)
0
100
200
300
400
500
0
5
10
15
20
25
30
VDS (Volts)
Figure 8: Capacitance Characteristics
C
a
p
a
c
it
a
n
c
e
(p
F
)
Ciss
0
5
10
15
20
25
30
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
P
o
w
e
r
(W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
θθθθJ
A
N
o
rm
a
li
z
e
d
T
ra
n
s
ie
n
t
T
h
e
rm
a
l
R
e
s
is
ta
n
c
e
Coss
Crss
VDS=15V
ID=4.2A
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=125°C/W
Ton
T
PD
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TA=25°C
0.0
0.1
1.0
10.0
100.0
0.01
0.1
1
10
100
VDS (Volts)
I D
(A
m
p
s
)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
s
10ms
1m
0.1s
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
100
10s
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AO3434_10 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:30V N-Channel MOSFET |
| AO3434A | 制造商:Alpha & Omega Semiconductor 功能描述:Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 制造商:Alpha & Omega Semiconductor 功能描述:MOSFET N-CH 30V 4A SOT23 |
| AO3434L | 制造商:Alpha & Omega Semiconductor 功能描述: |
| AO3435 | 功能描述:MOSFET P CH 20V 2.9A SOT23 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| AO3435_10 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:20V P-Channel MOSFET |
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