参数资料
型号: AO4468
厂商: ALPHA AND OMEGA SEMICONDUCTOR
元件分类: 小信号晶体管
英文描述: 10500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: GREEN, SOIC-8
文件页数: 1/5页
文件大小: 253K
代理商: AO4468
AO4468
30V N-Channel MOSFET
General Description
Product Summary
VDS
ID (at VGS=10V)
10.5A
RDS(ON) (at VGS=10V)
< 17m
RDS(ON) (at VGS = 4.5V)
< 23m
ESD Protected
100% UIS Tested
100% Rg Tested
Symbol
VDS
VGS
IDM
IAS, IAR
EAS, EAR
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
RθJL
°C
Thermal Characteristics
W
3.1
2
TA=70°C
Junction and Storage Temperature Range
-55 to 150
Units
Parameter
Typ
Max
°C/W
RθJA
31
59
40
Maximum Junction-to-Ambient
A
V
±20
Gate-Source Voltage
mJ
Avalanche Current
C
18
A
19
A
The AO4468 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
V
Maximum
Units
Parameter
Absolute Maximum Ratings TA=25°C unless otherwise noted
30V
10.5
8.5
50
Drain-Source Voltage
30
TA=25°C
TA=70°C
Power Dissipation
B
PD
Avalanche energy L=0.1mH
C
Pulsed Drain Current
C
Continuous Drain
Current
TA=25°C
ID
Maximum Junction-to-Lead
°C/W
Maximum Junction-to-Ambient
A D
16
75
24
SOIC-8
Top View
Bottom View
D
S
G
D
S
Rev 6: December 2010
www.aosmd.com
Page 1 of 5
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