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参数资料
| 型号： | AO4468 |
| 厂商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 10500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | GREEN, SOIC-8 |
| 文件页数： | 2/5页 |
| 文件大小： | 253K |
| 代理商： | AO4468 |
AO4468
Symbol
Min
Typ
Max
Units
BVDSS
30
V
VDS=30V, VGS=0V
1
TJ=55°C
5
IGSS
±10
A
VGS(th)
Gate Threshold Voltage
1.2
1.8
2.4
V
ID(ON)
50
A
14
17
TJ=125°C
20
24
18
23
m
gFS
36
S
VSD
0.75
1
V
IS
4
A
Ciss
740
888
pF
Coss
110
145
pF
Crss
82
115
pF
Rg
0.5
1.1
1.7
Qg(10V)
15
nC
Qg(4.5V)
7.5
nC
Qgs
2.5
nC
Qgd
3
nC
tD(on)
5
ns
tr
3.5
ns
tD(off)
19
ns
tf
3.5
ns
trr
18
22
ns
Qrr
9
12
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
IF=10.5A, dI/dt=100A/s
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=1.45,
RGEN=3
Gate Source Charge
Gate Drain Charge
Total Gate Charge
Body Diode Reverse Recovery Charge
m
On state drain current
IS=1A,VGS=0V
VDS=5V, ID=10.5A
VGS=4.5V, ID=9A
Forward Transconductance
Diode Forward Voltage
A
VDS=VGS ID=250A
VDS=0V, VGS=±16V
Zero Gate Voltage Drain Current
Gate-Body leakage current
ID=250A, VGS=0V
VGS=10V, VDS=5V
VGS=10V, ID=10.5A
RDS(ON)
Static Drain-Source On-Resistance
IDSS
Drain-Source Breakdown Voltage
Reverse Transfer Capacitance
IF=10.5A, dI/dt=100A/s
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
Body Diode Reverse Recovery Time
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
VGS=10V, VDS=15V, ID=10.5A
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
A. The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in
2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
Rev 6: December 2010
www.aosmd.com
Page 2 of 5
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相关代理商/技术参数 |
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|---|---|
| AO4468_10 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:30V N-Channel MOSFET |
| AO4470 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AO4472 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AO4474 | 功能描述:MOSFET N-CH 30V 13.4A 8-SOIC RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| AO4476 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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