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参数资料
| 型号： | AO4801A |
| 厂商： | ALPHA |
| 英文描述： | Dual P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 双P沟道增强型场效应晶体管 |
| 文件页数： | 2/4页 |
| 文件大小： | 135K |
| 代理商： | AO4801A |
AO4801A
Symbol
STATIC PARAMETERS
Min
Typ
Max
Units
BV
DSS
-30
V
V
DS
=-30V, V
GS
=0V
-1
-5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
±100
-1.3
nA
V
A
Gate Threshold Voltage
On state drain current
-0.6
-25
-0.95
34
48
41
60
14
42
60
52
75
T
J
=125°C
m
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
S
V
A
-0.74
-1
-2
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
933
108
81
6
1200
pF
pF
pF
9
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
9.3
1.5
3.7
5.2
6.8
42
15
21
14.3
12.2
nC
nC
nC
ns
ns
ns
ns
28
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-5.6A, dI/dt=100A/
μ
s
Drain-Source Breakdown Voltage
I
D
=-250uA, V
GS
=0V
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-10V, I
D
=-5.6A
Reverse Transfer Capacitance
Gate resistance
I
F
=-5.6A, dI/dt=100A/
μ
s
V
DS
=V
GS
I
D
=-250
μ
A
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
DSS
Zero Gate Voltage Drain Current
uA
V
DS
=0V, V
GS
=±12V
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
m
V
GS
=-2.5V, I
D
=-2.5A
V
DS
=-5V, I
D
=-5.6A
I
S
=-1A,V
GS
=0V
V
GS
=-4.5V, I
D
=-3.5A
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=-10V, V
DS
=-15V, R
L
=2.7
,
R
GEN
=6
Turn-On DelayTime
V
GS
=-4.5V, V
DS
=-15V, I
D
=-5.6A
Gate Drain Charge
V
GS
=0V, V
DS
=-15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
A: The value of R
θ
JA
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T
A
=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t
≤
10s junction to ambient thermal resistance rating.
Rev0: Mar. 2007
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AO4801A_11 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:30V P-Channel MOSFET |
| AO4801AL | 功能描述:MOSFET 2P-CH 30V 5A 8SOIC 制造商:alpha & omega semiconductor inc. 系列:- 包装:带卷（TR） 零件状态:过期 FET 类型:2 个 P 沟道（双） FET 功能:逻辑电平门 漏源极电压（Vdss）:30V 电流 - 连续漏极（Id）（25°C 时）:5A 不同?Id，Vgs 时的?Rds On（最大值）:48 毫欧 @ 5A，10V 不同 Id 时的 Vgs（th）（最大值）:1.3V @ 250μA 不同 Vgs 时的栅极电荷（Qg）:9nC @ 4.5V 不同 Vds 时的输入电容（Ciss）:780pF @ 15V 功率 - 最大值:2W 工作温度:-55°C ~ 150°C（TJ） 安装类型:表面贴装 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商器件封装:8-SO 标准包装:1 |
| AO4801AL_001 | 功能描述:MOSFET 2P-CH 30V 5A 8SOIC 制造商:alpha & omega semiconductor inc. 系列:- 包装:带卷（TR） 零件状态:过期 FET 类型:2 个 P 沟道（双） FET 功能:逻辑电平门 漏源极电压（Vdss）:30V 电流 - 连续漏极（Id）（25°C 时）:5A 不同?Id，Vgs 时的?Rds On（最大值）:48 毫欧 @ 5A，10V 不同 Id 时的 Vgs（th）（最大值）:1.3V @ 250μA 不同 Vgs 时的栅极电荷（Qg）:9nC @ 4.5V 不同 Vds 时的输入电容（Ciss）:780pF @ 15V 功率 - 最大值:2W 工作温度:-55°C ~ 150°C（TJ） 安装类型:表面贴装 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商器件封装:8-SO 标准包装:1 |
| AO4801AS | 功能描述:MOSFET 2P-CH 30V 5A 8SOIC 制造商:alpha & omega semiconductor inc. 系列:* 零件状态:过期 标准包装:1 |
| AO4801HL | 功能描述:MOSFET 2P-CH 30V 5A 8SOIC 制造商:alpha & omega semiconductor inc. 系列:* 零件状态:过期 标准包装:1 |
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