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参数资料
| 型号： | AO4932 |
| 厂商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 8000 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | GREEN, SOIC-8 |
| 文件页数： | 2/9页 |
| 文件大小： | 668K |
| 代理商： | AO4932 |
AO4932
Symbol
Min
Typ
Max
Units
BVDSS
30
V
VDS=30V, VGS=0V
0.01
0.1
TJ=125°C
5
10
IGSS
100
nA
VGS(th)
Gate Threshold Voltage
1.4
1.8
2.4
V
ID(ON)
40
A
13
15.8
TJ=125°C
20.2
25.2
16
19.6
m
gFS
64
S
VSD
0.4
0.6
V
IS
4.5
A
Ciss
1450
1885
pF
Coss
224
pF
Crss
92
pF
Rg
1.6
3.0
Qg(10V)
24
31
nC
Qg(4.5V)
12
16
nC
Qgs
3.9
nC
Qgd
4.2
nC
tD(on)
5.5
ns
tr
4.7
ns
mA
IDSS
Zero Gate Voltage Drain Current
ID=1mA, VGS=0V
VGS=0V, VDS=15V, f=1MHz
Reverse Transfer Capacitance
Gate-Body leakage current
Forward Transconductance
Diode Forward Voltage
FET1 Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
DYNAMIC PARAMETERS
VGS=10V, VDS=5V
VGS=10V, ID=9A
m
VGS=4.5V, ID=7A
RDS(ON)
Static Drain-Source On-Resistance
Maximum Body-Diode + Schottky Continuous Current
Drain-Source Breakdown Voltage
On state drain current
IS=1A,VGS=0V
VDS=5V, ID=9A
Total Gate Charge
VGS=10V, VDS=15V, ID=9A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
SWITCHING PARAMETERS
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Output Capacitance
VDS=0V, VGS= ±12V
VDS=VGS ID=250A
Input Capacitance
Turn-On Rise Time
VGS=10V, VDS=15V, RL=1.7,
Turn-On DelayTime
tr
4.7
ns
tD(off)
24
ns
tf
4
ns
trr
10
12
ns
Qrr
6.8
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge IF=9A, dI/dt=300A/s
Turn-Off Fall Time
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=1.7,
RGEN=3
IF=9A, dI/dt=300A/s
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation P
D is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialT
J=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, assuming a maximum junction temperature of T
J(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev 3: Dec 2010
www.aosmd.com
Page 2 of 9
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AO4932_11 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:Asymmetric Dual N-Channel MOSFET |
| AO4936 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:N-Channel 30-V (D-S) MOSFET |
| AO4938 | 制造商:SHENZHENFREESCALE 制造商全称:ShenZhen FreesCale Electronics. Co., Ltd 功能描述:30V Dual N-Channel MOSFET |
| AO4940 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4940_12 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:Asymmetric Dual N-Channel MOSFET |
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