参数资料
型号: AO6402A
厂商: ALPHA AND OMEGA SEMICONDUCTOR
元件分类: JFETs
英文描述: 30 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: ROHS COMPLIANT, TSOP-6
文件页数: 4/5页
文件大小: 279K
代理商: AO6402A
AO6402A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0
2
4
6
8
10
0
2
4
6
8
10
12
Qg (nC)
Figure 7: Gate-Charge Characteristics
V
G
S
(V
o
lt
s
)
0
200
400
600
800
1000
0
5
10
15
20
25
30
VDS (Volts)
Figure 8: Capacitance Characteristics
C
a
p
a
c
it
a
n
c
e
(p
F
)
Ciss
0
10
20
30
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
P
o
w
e
r
(W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
θθθθ
J
A
N
o
rm
a
li
z
e
d
T
ra
n
s
ie
n
t
T
h
e
rm
a
l
R
e
s
is
ta
n
c
e
Coss
Crss
VDS=15V
ID=7A
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=110°C/W
Ton
T
PD
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TA=25°C
0.0
0.1
1.0
10.0
100.0
0.01
0.1
1
10
100
VDS (Volts)
I D
(A
m
p
s
)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
s
10ms
1ms
0.1s
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
100
10s
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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