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| 型号： | AO7410 |
| 厂商： | Alpha & Omega Semiconductor Inc |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 1.7A SC70 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 55 毫欧 @ 1.7A，10V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 12nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 285pF @ 15V |
| 功率 - 最大： | 350mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-70，SOT-323 |
| 供应商设备封装： | SC-70 |
| 包装： | 带卷 (TR) |
AO7410
Electrical Characteristics (T J =25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BV DSS
Drain-Source Breakdown Voltage
I D =250 μ A, V GS =0V
30
V
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate-Body leakage current
V DS =30V, V GS =0V
V DS =0V, V GS =±12V
T J =55°C
1
5
±100
μ A
nA
V GS(th)
I D(ON)
R DS(ON)
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
V DS =V GS I D =250 μ A
V GS =10V, V DS =5V
V GS =10V, I D =1.7A
V GS =4.5V, I D =1.5A
T J =125°C
0.5
15
1
45
70
50
1.5
55
84
65
V
A
m ?
m ?
V GS =2.5V, I D =1A
61
85
m ?
g FS
Forward Transconductance
V DS =5V, I D =3.6A
14
S
V SD
Diode Forward Voltage
I S =1A,V GS =0V
0.75
1
V
I S
Maximum Body-Diode Continuous Current
1.5
A
DYNAMIC PARAMETERS
C iss
Input Capacitance
185
235
285
pF
C oss
C rss
R g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V GS =0V, V DS =15V, f=1MHz
V GS =0V, V DS =0V, f=1MHz
25
10
0.9
35
18
1.8
45
25
2.7
pF
pF
?
SWITCHING PARAMETERS
Q g (10V)
Total Gate Charge
10
12
nC
Q g (4.5V) Total Gate Charge
Q gs Gate Source Charge
V GS =10V, V DS =15V, I D =4A
4.7
0.95
nC
nC
Q gd
t D(on)
Gate Drain Charge
Turn-On DelayTime
1.6
3.5
nC
ns
t r
t D(off)
t f
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V GS =10V, V DS =15V, R L =3.75 ? ,
R GEN =3 ?
1.5
17.5
2.5
ns
ns
ns
t rr
Body Diode Reverse Recovery Time
I F =4A, dI/dt=100A/ μ s
8.5
11
ns
Q rr
Body Diode Reverse Recovery Charge I F =4A, dI/dt=100A/ μ s
2.6
3.5
nC
A. The value of R θ JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 ° C. The
value in any given application depends on the user's specific board design.
B. The power dissipation P D is based on T J(MAX) =150 ° C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =150 ° C. Ratings are based on low frequency and duty cycles to keep
initialT J =25 ° C.
D. The R θ JA is the sum of the thermal impedence from junction to lead R θ JL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 μ s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T J(MAX) =150 ° C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 5: Dec. 2012
www.aosmd.com
Page 2 of 5
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