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参数资料
| 型号： | AOI452A |
| 厂商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 55 A, 25 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封装： | GREEN, TO-251A, IPAK-3 |
| 文件页数： | 1/7页 |
| 文件大小： | 291K |
| 代理商： | AOI452A |
General Description
Features
(VGS = 10V)
(VGS = 4.5V)
- RoHS Compliant
100% UIS Tested!
- Halogen Free
100% R g Tested!
Symbol
VDS
VGS
IDM
IAR
EAR
TJ, TSTG
Symbol
Typ
Max
14.2
17
39
47
RθJC
2.5
3
ID = 55A
RDS(ON) < 7.3m
TC=25°C
3.2
25
TC=100°C
27
120
Pulsed Drain Current
C
Continuous Drain
Current
G
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Units
Maximum Junction-to-Ambient
A
t ≤ 10s
°C/W
Parameter
RθJA
V
±20
Gate-Source Voltage
Drain-Source Voltage
25
AOI452A
N-Channel SDMOS
TM Power Transistor
Maximum
Units
Parameter
Absolute Maximum Ratings TA=25°C unless otherwise noted
The AOI452A is fabricated with SDMOS
TM trench
technology that combines excellent RDS(ON) with low gate
charge.The result is outstanding efficiency with
controlled switching behavi
or. This universal technology
is well suited for PWM, load switching and general
purpose applications.
RDS(ON) < 14m
VDS (V) =25V
Repetitive avalanche energy L=0.1mH
C
mJ
Avalanche Current
C
13
Continuous Drain
Current
36
16
A
TA=25°C
IDSM
A
TA=70°C
ID
55
43
TC=25°C
TC=100°C
Power Dissipation
B
PD
W
Power Dissipation
A
PDSM
W
TA=70°C
50
2.2
TA=25°C
Maximum Junction-to-Case
Steady-State
°C/W
Steady-State
°C/W
Maximum Junction-to-Ambient
A D
G
D
S
D
Top View
Bottom View
TO-251A
IPAK
G
D
S
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AOI468 | 功能描述:MOSFET N CH 300V 11.5A TO252 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| AOI472A | 功能描述:MOSFET N-CH 25V 17A TO251A RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:SDMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| AOI478 | 制造商:Alpha & Omega Semiconductor 功能描述: |
| AOI482 | 功能描述:MOSFET N-CH 100V 32A TO251A RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| AOI4C60 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:TO251 PACKAGE MARKING DESCRIPTION |
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