- 您现在的位置：买卖IC网 > PDF目录51256 > AON6414A (ALPHA AND OMEGA SEMICONDUCTOR) 50 A, 30 V, 0.0114 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | AON6414A |
| 厂商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 50 A, 30 V, 0.0114 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | 6 X 5 MM, GREEN, DFN-8 |
| 文件页数： | 1/6页 |
| 文件大小： | 384K |
| 代理商： | AON6414A |
AON6414A
30V N-Channel MOSFET
General Description
Product Summary
VDS
ID (at VGS=10V)
50A
RDS(ON) (at VGS=10V)
< 8m
RDS(ON) (at VGS=4.5V)
< 10.5m
100% UIS Tested
100% Rg Tested
Symbol
VDS
VGS
V
±20
Gate-Source Voltage
Drain-Source Voltage
30
The AON6414A uses advanced trench technology to
provide excellent RDS(ON), low gate charge.This device is
suitable for use as a high side switch in SMPS and
general purpose applications.
V
Maximum
Units
Parameter
Absolute Maximum Ratings TA=25°C unless otherwise noted
30V
G
D
S
Top View
1
2
3
4
8
7
6
5
PIN1
DFN5X6
Top View
Bottom View
VGS
IDM
IAS, IAR
EAS, EAR
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
RθJC
Parameter
Typ
Max
TC=25°C
2.3
12.5
TC=100°C
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Units
Maximum Junction-to-Ambient
A
°C/W
RθJA
17
44
21
V
±20
Gate-Source Voltage
Avalanche energy L=0.05mH
C
mJ
Avalanche Current
C
10
A
35
A
TA=25°C
IDSM
A
TA=70°C
140
Pulsed Drain Current
C
Continuous Drain
Current
ID
50
30
TC=25°C
TC=100°C
Power Dissipation
B
PD
Continuous Drain
Current
31
13
W
Power Dissipation
A
PDSM
W
TA=70°C
31
1.5
TA=25°C
Maximum Junction-to-Case
°C/W
Maximum Junction-to-Ambient
A D
3.4
53
4
G
D
S
Top View
1
2
3
4
8
7
6
5
PIN1
DFN5X6
Top View
Bottom View
Rev 3: Oct 2010
www.aosmd.com
Page 1 of 6
相关PDF资料 |
PDF描述 |
|---|---|
| AON7400 | 26 A, 30 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AP02N60J-H | 1.4 A, 700 V, 8.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| AP02N60H-H | 1.4 A, 700 V, 8.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP02N70EJ | 1.6 A, 700 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| AP03N40J-HF | 2.1 A, 400 V, 3.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AON6414A_V2 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:Plastic Encapsulated Device |
| AON6414AL | 制造商:SHENZHENFREESCALE 制造商全称:ShenZhen FreesCale Electronics. Co., Ltd 功能描述:30V N-Channel MOSFET |
| AON6414G | 功能描述:MOSFET N-CH 30V 8DFN 5X6 制造商:alpha & omega semiconductor inc. 系列:- 零件状态:初步 标准包装:3,000 |
| AON6416 | 功能描述:MOSFET N CH 30V 22A DFN5X6 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:SDMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| AON6418 | 功能描述:MOSFET N CH 30V 36A SDMOS RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:SDMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
发布紧急采购，3分钟左右您将得到回复。