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参数资料
| 型号： | AON6414A |
| 厂商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 50 A, 30 V, 0.0114 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | 6 X 5 MM, GREEN, DFN-8 |
| 文件页数： | 2/6页 |
| 文件大小： | 384K |
| 代理商： | AON6414A |
Symbol
Min
Typ
Max
Units
BVDSS
30
V
VDS=30V, VGS=0V
1
TJ=55°C
5
IGSS
100
nA
VGS(th)
Gate Threshold Voltage
1.5
1.95
2.5
V
ID(ON)
140
A
6.6
8
TJ=125°C
9.5
11.4
8.2
10.5
m
gFS
55
S
VSD
0.72
1
V
IS
35
A
Ciss
920
1150
1380
pF
Coss
125
180
235
pF
Crss
60
105
150
pF
Rg
0.55
1.1
1.65
Qg(10V)
16
20
24
nC
Qg(4.5V)
7.6
9.5
11.4
nC
Qgs
2
2.7
3.2
nC
Qgd
3
5
7
nC
tD(on)
6.5
ns
t
2
ns
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
VGS=10V, VDS=15V, ID=20A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
IS=1A,VGS=0V
VDS=5V, ID=20A
VGS=4.5V, ID=20A
Forward Transconductance
Diode Forward Voltage
V
=10V, V =15V, R =0.75
,
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Total Gate Charge
A
VDS=VGS ID=250A
VDS=0V, VGS= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
m
On state drain current
ID=250A, VGS=0V
VGS=10V, VDS=5V
VGS=10V, ID=20A
RDS(ON)
Static Drain-Source On-Resistance
IDSS
Reverse Transfer Capacitance
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Drain-Source Breakdown Voltage
tr
2
ns
tD(off)
17
ns
tf
3.5
ns
trr
7
8.7
10.5
ns
Qrr
11
13.5
16
nC
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Turn-On Rise Time
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=0.75,
RGEN=3
Turn-Off Fall Time
IF=20A, dI/dt=500A/s
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
Power dissipation P
DSM is based on R
θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation P
D is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial T
J =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C.
Rev 3: Oct 2010
www.aosmd.com
Page 2 of 6
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相关代理商/技术参数 |
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| AON6414A_V2 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:Plastic Encapsulated Device |
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| AON6414G | 功能描述:MOSFET N-CH 30V 8DFN 5X6 制造商:alpha & omega semiconductor inc. 系列:- 零件状态:初步 标准包装:3,000 |
| AON6416 | 功能描述:MOSFET N CH 30V 22A DFN5X6 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:SDMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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