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参数资料
| 型号： | AON6414A |
| 厂商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 50 A, 30 V, 0.0114 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | 6 X 5 MM, GREEN, DFN-8 |
| 文件页数： | 4/6页 |
| 文件大小： | 384K |
| 代理商： | AON6414A |
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
2
4
6
8
10
0
5
10
15
20
V
G
S
(V
o
lt
s
)
Q
g (nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
1000
1200
1400
1600
0
5
10
15
20
25
30
C
a
p
a
c
it
a
n
c
e
(p
F
)
V
DS (Volts)
Figure 8: Capacitance Characteristics
C
iss
0
40
80
120
160
200
0.0001
0.001
0.01
0.1
1
10
P
o
w
e
r
(W
)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
C
oss
C
rss
V
DS=15V
I
D=20A
T
J(Max)=150°C
T
C=25°C
10
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01
0.1
1
10
100
I D
(A
m
p
s
)
V
DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
s
10ms
1ms
DC
R
DS(ON)
limited
T
J(Max)=150°C
T
C=25°C
100
s
40
0
2
4
6
8
10
0
5
10
15
20
V
G
S
(V
o
lt
s
)
Q
g (nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
1000
1200
1400
1600
0
5
10
15
20
25
30
C
a
p
a
c
it
a
n
c
e
(p
F
)
V
DS (Volts)
Figure 8: Capacitance Characteristics
C
iss
0
40
80
120
160
200
0.0001
0.001
0.01
0.1
1
10
P
o
w
e
r
(W
)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
0.001
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Z
θθθθ
J
C
N
o
rm
a
li
z
e
d
T
ra
n
s
ie
n
t
T
h
e
rm
a
l
R
e
s
is
ta
n
c
e
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
C
oss
C
rss
V
DS=15V
I
D=20A
Single Pulse
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)=150°C
T
C=25°C
10
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01
0.1
1
10
100
I D
(A
m
p
s
)
V
DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
s
10ms
1ms
DC
R
DS(ON)
limited
T
J(Max)=150°C
T
C=25°C
100
s
D=T
on/T
T
J,PK=TC+PDM.Z
θJC.RθJC
RθJC=4°C/W
Rev 3: Oct 2010
www.aosmd.com
Page 4 of 6
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相关代理商/技术参数 |
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| AON6414A_V2 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:Plastic Encapsulated Device |
| AON6414AL | 制造商:SHENZHENFREESCALE 制造商全称:ShenZhen FreesCale Electronics. Co., Ltd 功能描述:30V N-Channel MOSFET |
| AON6414G | 功能描述:MOSFET N-CH 30V 8DFN 5X6 制造商:alpha & omega semiconductor inc. 系列:- 零件状态:初步 标准包装:3,000 |
| AON6416 | 功能描述:MOSFET N CH 30V 22A DFN5X6 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:SDMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| AON6418 | 功能描述:MOSFET N CH 30V 36A SDMOS RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:SDMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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