- 您现在的位置：买卖IC网 > PDF目录51256 > AOI452A (ALPHA AND OMEGA SEMICONDUCTOR) 55 A, 25 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 PDF资料下载
参数资料
| 型号： | AOI452A |
| 厂商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 55 A, 25 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封装： | GREEN, TO-251A, IPAK-3 |
| 文件页数： | 2/7页 |
| 文件大小： | 291K |
| 代理商： | AOI452A |
AOI452A
Symbol
Min
Typ
Max
Units
BVDSS
25
V
VDS=25V, VGS=0V
10
TJ=55°C
50
IGSS
100
nA
VGS(th)
Gate Threshold Voltage
1.5
2
2.5
V
ID(ON)
120
A
6
7.3
TJ=125°C
9
10.8
11.1
14
m
gFS
50
S
VSD
0.7
1
V
IS
55
A
Ciss
990
1180
1450
pF
Coss
210
275
350
pF
Crss
125
175
245
pF
Rg
1.1
1.7
2.5
Qg(10V)
17
21.7
26
nC
Qg(4.5V)
35
11
13
nC
Qgs
345
nC
Qgd
4
6.4
9
nC
tD(on)
6.8
ns
tr
13.8
ns
tD(off)
21.5
ns
tf
8.7
ns
trr
8.5
10.6
13
ns
Qrr
13
16
20
nC
Rev 0 : Nov-08
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=12.5V, RL=0.42,
RGEN=3
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
VGS=10V, VDS=12.5V, ID=20A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
m
IS=1A,VGS=0V
VDS=5V, ID=20A
VGS=4.5V, ID=20A
Forward Transconductance
Diode Forward Voltage
RDS(ON)
Static Drain-Source On-Resistance
IDSS
A
VDS=VGS ID=250A
VDS=0V, VGS= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Body Diode Reverse Recovery Time
Drain-Source Breakdown Voltage
On state drain current
ID=250A, VGS=0V
VGS=10V, VDS=5V
VGS=10V, ID=20A
Reverse Transfer Capacitance
IF=20A, dI/dt=500A/s
VGS=0V, VDS=12.5V, f=1MHz
SWITCHING PARAMETERS
A. The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The Power
dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
相关PDF资料 |
PDF描述 |
|---|---|
| AON6414A | 50 A, 30 V, 0.0114 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AON7400 | 26 A, 30 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AP02N60J-H | 1.4 A, 700 V, 8.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| AP02N60H-H | 1.4 A, 700 V, 8.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP02N70EJ | 1.6 A, 700 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AOI468 | 功能描述:MOSFET N CH 300V 11.5A TO252 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| AOI472A | 功能描述:MOSFET N-CH 25V 17A TO251A RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:SDMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| AOI478 | 制造商:Alpha & Omega Semiconductor 功能描述: |
| AOI482 | 功能描述:MOSFET N-CH 100V 32A TO251A RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| AOI4C60 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:TO251 PACKAGE MARKING DESCRIPTION |
发布紧急采购，3分钟左右您将得到回复。