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参数资料
| 型号： | AP2428GN3 |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 30 V, 0.027 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | 3 X 3 MM, ROHS COMPLIANT, DFN-8 |
| 文件页数： | 1/5页 |
| 文件大小： | 173K |
| 代理商： | AP2428GN3 |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Bottom Exposed DFN
BVDSS
30V
▼ Low On-resistance
RDS(ON)
27mΩ
▼ Lower Profile
ID
5.5A
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
V
VGS
Gate-Source Voltage
V
ID@TA=25℃
Continuous Drain Current
3
A
ID@TA=70℃
Continuous Drain Current
3
A
IDM
Pulsed Drain Current
1
A
PD@TA=25℃
Total Power Dissipation
1.25
W
Linear Derating Factor
0.01
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
100
℃/W
Data and specifications subject to change without notice
201120072
Parameter
1
AP2428GN3
RoHS-compliant Product
30
±10
5.5
4.4
20
DFN3*3
G1
S1
G2
S2
D1
D2
S1
G1
D1
S2
G2
D2
D1
D2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP2430GN3-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Bottom Exposed DFN, Low On-resistance |
| AP2434GN3-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Bottom Exposed DFN, Low On-resistance |
| AP245 | 制造商:RFHIC 制造商全称:RFHIC 功能描述:MMIC |
| AP2451GY | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2451GY-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Capable of 2.5V Gate Drive, Lower on-resistance |
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