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参数资料
| 型号： | AP2428GN3 |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 30 V, 0.027 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | 3 X 3 MM, ROHS COMPLIANT, DFN-8 |
| 文件页数： | 3/5页 |
| 文件大小： | 173K |
| 代理商： | AP2428GN3 |
AP2428GN3
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. On-Resistance vs.
Reverse Diode
Drain Current
3
0
4
8
12
16
20
0
0.4
0.8
1.2
1.6
2
V DS , Drain-to-Source Voltage (V)
I D
,Dr
ai
n
C
u
rr
ent
(A
)
T A =25
o C
V G =2.5V
4.0V
5.0V
4.5V
0
4
8
12
16
20
01
234
V DS , Drain-to-Source Voltage (V)
I D
,Dr
ai
n
C
u
rr
ent
(A
)
T A =150
o C
4.0V
V G =2.5V
4.5V
5.0V
0
2
4
6
8
0
0.4
0.8
1.2
1.6
V SD , Source-to-Drain Voltage (V)
I S
(A
)
T j =25
o C
T j =150
o C
0.6
0.8
1.0
1.2
1.4
1.6
1.8
25
50
75
100
125
150
T j , Junction Temperature (
o C)
N
ormalize
dR
DS(ON)
V G =4.5V
I D =5A
20
30
40
50
60
12
34
5
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =3A
T A =25
o C
3.5V
20.0
22.0
24.0
26.0
28.0
30.0
32.0
0
4
8
12
16
20
I D , Drain Current (A)
R
DS(ON)
(m
)
V GS =4.5V
V GS =2.5V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP2430GN3-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Bottom Exposed DFN, Low On-resistance |
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| AP2451GY | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2451GY-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Capable of 2.5V Gate Drive, Lower on-resistance |
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