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参数资料
| 型号： | AP2428GN3 |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 30 V, 0.027 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | 3 X 3 MM, ROHS COMPLIANT, DFN-8 |
| 文件页数： | 4/5页 |
| 文件大小： | 173K |
| 代理商： | AP2428GN3 |
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
AP2428GN3
0
2
4
6
8
10
010
20
30
Q G , Total Gate Charge (nC)
V
GS
,G
ate
to
S
ou
rc
eVoltage
(
V
)
V DS =15V
V DS =20V
V DS =25V
I D =5A
10
100
1000
1
5
9
131721
2529
V DS , Drain-to-Source Voltage (V)
C
(
pF)
f=1.0MHz
Ciss
Coss
Crss
0.01
0.1
1
10
100
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
I D
(A
)
T A =25
o C
Single Pulse
1s
1ms
10ms
100ms
DC
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
ormalize
dT
h
ermal
Re
spon
se
(
R
th
ja
)
0.01
0.05
0.1
0.2
DUTY=0.5
Single Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
t
T
Rthja = 180℃/W
0.02
Q
VG
4.5V
QGS
QGD
QG
Charge
0
4
8
12
16
20
0123
V GS , Gate-to-Source Voltage (V)
I D
,Dr
ai
n
C
u
rr
ent
(A
)
T j =150
o C
T j =25
o C
V DS =5V
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相关代理商/技术参数 |
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|---|---|
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