参数资料
型号: AP40P03GP
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 30 A, 30 V, 0.028 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: ROHS COMPLIANT, TO-220, 3 PIN
文件页数: 2/5页
文件大小: 117K
代理商: AP40P03GP
AP40P03GP
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-30
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=-1mA
-
-0.02
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-10V, ID=-18A
-
28
VGS=-4.5V, ID=-10A
-
50
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-18A
-
20
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=-30V, VGS=0V
-
-1
uA
Drain-Source Leakage Current (Tj=150
oC)
VDS=-24V, VGS=0V
-
-25
uA
IGSS
Gate-Source Leakage
VGS= ±20V
-
±100
nA
Qg
Total Gate Charge
2
ID=-18A
-
14
22
nC
Qgs
Gate-Source Charge
VDS=-24V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
9
-
nC
td(on)
Turn-on Delay Time
2
VDS=-15V
-
12
-
ns
tr
Rise Time
ID=-18A
-
56
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
30
-
ns
tf
Fall Time
RD=0.8Ω
-57
-
ns
Ciss
Input Capacitance
VGS=0V
-
915
1465
pF
Coss
Output Capacitance
VDS=-25V
-
280
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
195
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=-18A, VGS=0V
-
-1.2
V
trr
Reverse Recovery Time
2
IS=-18A, VGS=0V,
-
30
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/s
-
21
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
2/4
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