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参数资料
| 型号： | AP40P03GP |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 30 A, 30 V, 0.028 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件页数： | 5/5页 |
| 文件大小： | 117K |
| 代理商： | AP40P03GP |
APTGF15X120T3G
A
P
TG
F15X120T3G
–
R
ev
0
J
uly,
2007
www.microsemi.com
5- 6
VGE = 15V
50
55
60
65
70
75
0
5
10
15
20
25
30
35
ICE, Collector to Emitter Current (A)
td(on),
Turn-On
De
la
yTi
me
(ns)
Turn-On Delay Time vs Collector Current
VCE = 600V
RG = 33
VGE=15V,
TJ=25°C
VGE=15V,
TJ=125°C
200
250
300
350
400
0
5
10
15
20
25
30
35
ICE, Collector to Emitter Current (A)
Turn-Off Delay Time vs Collector Current
td(o
ff)
,Turn
-Off
D
el
ay
T
im
e
(ns
)
VCE = 600V
RG = 33
VGE=15V
0
40
80
120
160
0
5
10
15
20
25
30
35
ICE, Collector to Emitter Current (A)
tr,
R
ise
Ti
m
e(ns)
Current Rise Time vs Collector Current
VCE = 600V
RG = 33
TJ = 25°C
TJ = 125°C
20
25
30
35
40
45
50
0
5
10
15
20
25
30
35
ICE, Collector to Emitter Current (A)
tf
,Fa
ll
Time
(
n
s)
Current Fall Time vs Collector Current
VCE = 600V, VGE = 15V, RG = 33
TJ=25°C,
VGE=15V
TJ=125°C,
VGE=15V
0
1
2
3
4
5
6
7
8
0
5
10
15
20
25
30
35
ICE, Collector to Emitter Current (A)
Turn-On Energy Loss vs Collector Current
E
on,
Tu
rn-On
E
n
er
gy
Loss
(mJ
)
VCE = 600V
RG = 33
TJ = 25°C
TJ = 125°C
0
0.5
1
1.5
2
2.5
0
5
10
15
20
25
30
35
ICE, Collector to Emitter Current (A)
Eo
ff
,Turn
-off
Ener
gy
Loss
(mJ)
Turn-Off Energy Loss vs Collector Current
VCE = 600V
VGE = 15V
RG = 33
Eon, 15A
Eoff, 15A
0
1
2
3
4
5
6
7
8
020
40
60
80
100
120
Gate Resistance (Ohms)
S
w
it
ch
ing
E
n
ergy
Losses
(m
J)
Switching Energy Losses vs Gate Resistance
VCE = 600V
VGE = 15V
TJ= 125°C
0
5
10
15
20
25
30
35
0
400
800
1200
I C
,Col
lec
to
rCu
rrent
(A)
Reverse Bias Safe Operating Area
VCE, Collector to Emitter Voltage (V)
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PDF描述 |
|---|---|
| AP40T10GR | 40 A, 100 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| AP40U03GH | 20 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP4224AGM | 9.2 A, 30 V, 0.015 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| AP4232BGM-HF | 7.6 A, 30 V, 0.022 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| AP4407GS | 50 A, 30 V, 0.014 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AP40SD | 功能描述:整流器/与可变电容器 250Volts 1.5pF-40pF RoHS:否 制造商:Xicon 电容范围:2.8 pF to 12.5 pF 容差: 电压额定值:200 V 工作温度范围:- 35 C to + 85 C 端接类型:SMD/SMT 产品:Trimmer Capacitors - Ceramic Dielectric |
| AP40T03GH | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP40T03GH_08 | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP40T03GH-HF-3TR | 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET NCH 30V 25MOHM TO-252 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 30V, 25MOHM, TO-252 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 30V, 25MOHM, TO-252, Transistor Polarity:N Channel, Continuous Drain Current Id:28A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.025ohm, Rds(on) Test Voltage Vgs:10V, Power Dissipation Pd:31.25W, Operating , RoHS Compliant: Yes 制造商:APEC (ADVANCED POWER ELECTRONICS CORP) 功能描述:MOSFET, NCH, 30V, 25MOHM, TO-252, Transistor Polarity:N Channel, Continuous Drai |
| AP40T03GI | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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