参数资料
型号: AP4936GM
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 5.8 A, 25 V, 0.037 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封装: ROHS COMPLIANT, SOP-8
文件页数: 1/6页
文件大小: 80K
代理商: AP4936GM
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low Gate Charge
BVDSS
25V
▼ Simple Drive Requirement
RDS(ON)
37mΩ
▼ Fast Switching
ID
5.8A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
W/℃
TSTG
TJ
Symbol
Value
Unit
Rthj-amb
Thermal Resistance Junction-ambient
3
Max.
62.5
℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
2
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.016
Continuous Drain Current
3
4.6
Pulsed Drain Current
1
30
Gate-Source Voltage
Continuous Drain Current
3
5.8
Parameter
Rating
Drain-Source Voltage
25
Pb Free Plating Product
200301061-1/6
AP4936GM
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
± 20
S1
G1
S2
G2
D1
D2
SO-8
G2
D2
S2
G1
D1
S1
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相关代理商/技术参数
参数描述
AP4936M 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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