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参数资料
| 型号： | AP4951GM |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 3.4 A, 60 V, 0.096 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SOP-8 |
| 文件页数： | 1/5页 |
| 文件大小： | 182K |
| 代理商： | AP4951GM |
Advanced Power
P-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
-60V
▼ Low Gate Charge
RDS(ON)
96mΩ
▼ Fast Switching Performance
ID
-3.4A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
W/℃
TSTG
℃
TJ
℃
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
62.5
℃/W
Data and specifications subject to change without notice
RoHS-compliant Product
Thermal Data
Parameter
Total Power Dissipation
2
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.016
Storage Temperature Range
Continuous Drain Current
3
-2.7
Pulsed Drain Current
1
-20
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
201108073-1/4
AP4951GM
Rating
-60
±20
-3.4
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G2
D2
S2
G1
D1
S1
S1
G1
S2
G2
D1
D2
SO-8
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP4951GM-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Low Gate Charge, Fast Switching Performance |
| AP4953D | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4953GM | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4953GM_08 | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4953GM-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Low Gate Charge |
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