参数资料
型号: AP562-F
厂商: TRIQUINT SEMICONDUCTOR INC
元件分类: 放大器
英文描述: 3300 MHz - 3800 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
封装: 6 X 5 MM, GREEN, MO-229VJGC, DFN-14
文件页数: 2/8页
文件大小: 497K
代理商: AP562-F
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
Phone 1-800-951-4401 FAX: 408-577-6633 e-mail: info-sales@tqs.com Web site: www.TriQuint.com
Page 2 of 8 May 2009
AP562
3.3-3.8 GHz WiMAX 8W Power Amplifier
Application Circuit PC Board Layout
V
pd
GND
V
cc
Circuit Board Material: 0.0147” Rogers Ultralam 2000, single layer, 1 oz
copper,
εr = 2.45, Microstrip line details: width = .042”, spacing = .050”
Baseplate Configuration
Notes:
1.
Please note that for reliable operation, the evaluation board will have to be mounted to a much
larger heat sink during operation and in laboratory environments to dissipate the power
consumed by the device. The use of a convection fan is also recommended in laboratory
environments.
2.
The area around the module underneath the PCB should not contain any soldermask in order to
maintain good RF grounding.
3.
For proper and safe operation in the laboratory, the power-on sequencing is recommended.
Evaluation Board Bias Procedure
Following bias procedure is recommended to ensure proper functionality of AP562 in a laboratory environment. The sequencing is not
required in the final system application.
Bias.
Voltage (V)
Vcc
+12
Vpd
+5
Turn-on Sequence:
1.
Attach input and output loads onto the evaluation board.
2.
Turn on power supply Vcc = +12V.
3.
Turn on power supply Vpd = +5V.
4.
Turn on RF power.
Turn-off Sequence:
1.
Turn off RF power.
2.
Turn off power supply Vpd = +5V.
3.
Turn off power supply Vcc = +12V.
相关PDF资料
PDF描述
AP60L02GH 50 A, 25 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP60L02GJ 50 A, 25 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
AP60T03GI 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP60T10GI-HF 34 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP60U02GH 40 A, 25 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
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