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参数资料
| 型号： | AP562-F |
| 厂商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分类： | 放大器 |
| 英文描述： | 3300 MHz - 3800 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封装： | 6 X 5 MM, GREEN, MO-229VJGC, DFN-14 |
| 文件页数： | 6/8页 |
| 文件大小： | 497K |
| 代理商： | AP562-F |
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
Phone 1-800-951-4401 FAX: 408-577-6633 e-mail: info-sales@tqs.com Web site: www.TriQuint.com
Page 6 of 8 May 2009
AP562
3.3-3.8 GHz WiMAX 8W Power Amplifier
3.4 – 3.6 GHz Application Note: Changing Icq Biasing Configurations
The AP562 can be configured to operate with lower bias current by varying the bias-adjust resistor R2. (Table 1) The
recommended circuit configurations shown previously in this datasheet have the device operating with a 400 mA as the
quiescent current (ICQ). This biasing level represents a tradeoff in terms of EVM and efficiency. Lowering ICQ will improve
upon the efficiency of the device, but degrade the EVM performance. Measured data shown in the plots below represents the
AP562 measured and configured for 3.5 GHz applications. It is expected that variation of the bias current for other frequency
applications will produce similar performance results.
Table 1 : Reduced Current Operation
Icq
(mA)
R2
()
VPD
(V)
IREF
(V)
400
270
5
2.92
350
275
5
2.88
300
320
5
2.83
250
380
5
2.8
200
473
5
2.73
150
616
5
2.66
100
857
5
2.6
EVM vs. Output Average Power vs. Icq
f=3.5 GHz
0
1
2
3
4
28
29
30
31
32
Pout (dBm)
EVM
(
%
)
100mA
150mA
200mA
250mA
300mA
350mA
400mA
Efficiency vs. Output Average Power vs Icq
f=3.5 GHz
8
12
16
20
24
28
29
30
31
32
Pout (dBm)
Efficiency
(%)
100mA
150mA
200mA
250mA
300mA
350mA
400mA
相关PDF资料 |
PDF描述 |
|---|---|
| AP60L02GH | 50 A, 25 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP60L02GJ | 50 A, 25 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| AP60T03GI | 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP60T10GI-HF | 34 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP60U02GH | 40 A, 25 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AP562-PCB | 功能描述:射频开发工具 3.4-3.6GHz Eval Brd 1W 12V RoHS:否 制造商:Taiyo Yuden 产品:Wireless Modules 类型:Wireless Audio 工具用于评估:WYSAAVDX7 频率: 工作电源电压:3.4 V to 5.5 V |
| AP562-PCB3400 | 功能描述:射频开发工具 3.4-3.6GHz Eval Brd 1W 12V RoHS:否 制造商:Taiyo Yuden 产品:Wireless Modules 类型:Wireless Audio 工具用于评估:WYSAAVDX7 频率: 工作电源电压:3.4 V to 5.5 V |
| AP562-PCB3500 | 功能描述:射频开发工具 3.4-3.6GHz Eval Brd 1W 12V RoHS:否 制造商:Taiyo Yuden 产品:Wireless Modules 类型:Wireless Audio 工具用于评估:WYSAAVDX7 频率: 工作电源电压:3.4 V to 5.5 V |
| AP5630 | 制造商:American Power Conversion Corp (APC by Schneider Electric) 功能描述:APC KVM PS/2 Server Module 制造商:Schneider Electric 功能描述:APC - Bulk |
| AP5631-DF | 制造商:Schneider Electric 功能描述:APC - Bulk |
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