参数资料
型号: AP562-F
厂商: TRIQUINT SEMICONDUCTOR INC
元件分类: 放大器
英文描述: 3300 MHz - 3800 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
封装: 6 X 5 MM, GREEN, MO-229VJGC, DFN-14
文件页数: 8/8页
文件大小: 497K
代理商: AP562-F
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
Phone 1-800-951-4401 FAX: 408-577-6633 e-mail: info-sales@tqs.com Web site: www.TriQuint.com
Page 8 of 8 May 2009
AP562
3.3-3.8 GHz WiMAX 8W Power Amplifier
Mechanical Information
This package is lead-free/Green/RoHS-compliant. The plating material on the pins is annealed matte tin over copper. It is compatible with
both lead-free (maximum 260
°C reflow temperature) and leaded (maximum 245 °C reflow temperature) soldering processes.
Drawing
Outline Drawing
Mounting Configuration / Land Pattern
Product Marking
The component will be laser marked with a
“AP562-F” product label with an alphanumeric
lot code on the top surface of the package.
Tape and reel specifications for this part will be
located on the website in the “Application
Notes” section.
Functional Pin Layout
Pin
Function
1
VBIAS
2, 3, 7, 8, 12, 13
N/C
4, 5, 6
RF IN
9, 10, 11
RF Output / Vcc
14
IREF
Backside paddle
GND
MSL / ESD Rating
ESD Rating: Class 1A
Value:
Passes
250V to <500V
Test:
Human Body Model (HBM)
Standard:
JEDEC Standard JESD22-A114
ESD Rating: Class IV
Value:
Passes
1000V to <2000V
Test:
Charged Device Model (CDM)
Standard:
JEDEC Standard JESD22-C101
MSL Rating: Level 3 at +260
°C convection reflow
Standard:
JEDEC Standard J-STD-020
相关PDF资料
PDF描述
AP60L02GH 50 A, 25 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP60L02GJ 50 A, 25 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
AP60T03GI 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP60T10GI-HF 34 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP60U02GH 40 A, 25 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
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