参数资料
型号: AP562-F
厂商: TRIQUINT SEMICONDUCTOR INC
元件分类: 放大器
英文描述: 3300 MHz - 3800 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
封装: 6 X 5 MM, GREEN, MO-229VJGC, DFN-14
文件页数: 4/8页
文件大小: 497K
代理商: AP562-F
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
Phone 1-800-951-4401 FAX: 408-577-6633 e-mail: info-sales@tqs.com Web site: www.TriQuint.com
Page 4 of 8 May 2009
AP562
3.3-3.8 GHz WiMAX 8W Power Amplifier
3.4-3.6 GHz Application Circuit (AP562-PCB3500)
Typical O-FDMA Performance at 25
°C
Frequency (GHz)
3.4
3.5
3.6
Units
Channel Power
+30
dBm
Power Gain
11.5 11.5
11.3
dB
Input Return Loss
11
15
dB
Output Return Loss
5.6
6.7
5.9
dB
EVM
2.2
1.9
1.7
%
Operating Current, Icc 720
685
670
mA
Collector Efficiency 11.1 11.7
12.2
%
Output P1dB
39.5 39.4
38.7
dBm
Quiescent Current, Icq
400
mA
Vpd
+5
V
Vcc
+12
V
C6
C7
C10
C13
C16
C1
C8
C17
C14
C11
C15
C18
C20
C12
R2
C21
R1
L3
C22
L3
C2
4
C2
3
C2
5
R3
D2
D1
Notes:
The primary RF microstrip line is 50
Ω.
Components shown on the silkscreen but not on the schematic are not used.
1. The edge of C23 is placed at 43mil from AP562 RFout pin.
2. The edge of C24 is placed right next to C23.
3. The edge of C22 is placed at 95mil from AP562 RFin pin.
4. The edge of L3 is placed right next to C22.
3.4-3.6 GHz Application Circuit Performance Plots
802.16-2004 O-FDMA, 64QAM-1/2, 1024-FFT, 20 symbols and 30 subchannels. 9.5 dB PAR @ 0.01%, 5 MHz Carrier BW
Gain vs. Frequency
T=25°C
7
8
9
10
11
12
3
3.2
3.4
3.6
3.8
4
Frequency (GHz)
G
a
in
(
dB)
Return Loss
T=25°C
-25
-20
-15
-10
-5
0
3
3.2
3.4
3.6
3.8
4
Frequency (GHz)
S11,
S22
(d
B
)
S11
S22
Current vs Output Average Power vs. Frequency
T=25°C
400
450
500
550
600
650
700
750
800
20
22
24
26
28
30
32
Output Power (dBm)
Co
lle
c
to
rCu
rre
n
t(
m
A)
3.4 GHz
3.5 GHz
3.6 GHz
Efficiency vs Output Average Power vs. Frequency
T=25°C
0
5
10
15
20
22
24
26
28
30
32
Output Power (dBm)
Collector
Efficiency
(%)
3.4 GHz
3.5 GHz
3.6 GHz
EVM vs. Output Average Power vs. Frequency
T=25°C
0
1
2
3
4
5
20
22
24
26
28
30
32
Output Power (dBm)
EVM
(%)
3.4 GHz
3.5 GHz
3.6 GHz
Power Gain vs Temperature
Pout = 30 dBm
10
11
12
13
-50
-30
-10
1030507090
Temperature (°C )
G
a
in
(
d
B)
3.4 GHz
3.5 GHz
3.6 GHz
相关PDF资料
PDF描述
AP60L02GH 50 A, 25 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP60L02GJ 50 A, 25 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
AP60T03GI 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP60T10GI-HF 34 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP60U02GH 40 A, 25 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
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