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参数资料
| 型号： | AP6900GSM |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 30 V, 0.03 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, SOP-8 |
| 文件页数： | 4/9页 |
| 文件大小： | 134K |
| 代理商： | AP6900GSM |
AP6900GSM
Schottky Specifications@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VF
Forward Voltage Drop
IF=1.0A
-
0.47
0.5
V
Irm
Maximum Reverse Leakage Current
Vr=30V
-
0.004
0.2
mA
Maximum Reverse Leakage Current
Vr=30V,Tj=100℃
-
0.5
1
mA
CT
Junction Capacitance
Vr=10V
-
66
-
pF
4/9
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