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参数资料
| 型号： | AP6900GSM |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 30 V, 0.03 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, SOP-8 |
| 文件页数： | 9/9页 |
| 文件大小： | 134K |
| 代理商： | AP6900GSM |
AP6900GSM
Schottky
Fig 1. Reverse Current vs Junction Temperature
Fig 2. Typical Forward Characteristics
Fig 3. Typical Junction Capacitance
9/9
10
100
1000
1
5
9
1317
2125
29
V DS , Drain-to-Source Voltage (V)
C
,
C
apac
itan
c
e
(
p
F
)
f=1.0MHz
0.0001
0.001
0.01
0.1
1
10
0
25
50
75
100
125
T j , Junction Temperature (
o C)
I
R
,
Re
v
e
rse
Cu
rre
n
t(
m
A)
30V
24V
1
10
0
0.3
0.6
0.9
1.2
1.5
V F , Forward Voltage Drop (V)
I
F
,
Forward
Cu
rre
n
t(
A
)
T j =25
o C
T j =150
o C
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