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参数资料
| 型号： | AP6900GSM |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 30 V, 0.03 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, SOP-8 |
| 文件页数： | 6/9页 |
| 文件大小： | 134K |
| 代理商： | AP6900GSM |
AP6900GSM
Channel-1
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
6/9
td(on) tr
td(off)t
f
VDS
VGS
10%
90%
Q
VG
4.5V
QGS
QGD
QG
Charge
0
2
4
6
8
10
12
0
4
8
12
16
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rce
Voltage
(
V
)
I D =6A
V DS =24V
10
100
1000
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
rm
aliz
ed
T
h
er
m
a
lRes
pon
se
(
R
th
ja
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja =135℃/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.1
1
10
100
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T A =25
o C
Single Pulse
1ms
10ms
100ms
1s
10s
DC
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