参数资料
型号: APT11058LFLL
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: JFETs
英文描述: 20 A, 1100 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
封装: TO-264(L), 3 PIN
文件页数: 4/5页
文件大小: 166K
代理商: APT11058LFLL
050-7181
Rev
A
4-2004
APT11058B2FLL_LFLL
Crss
Ciss
Coss
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
Qg,TOTALGATECHARGE(nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE12,GATECHARGESvsGATE-TO-SOURCEVOLTAGE
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C
,CAPACITANCE
(pF)
1
10
100
1100
0
10
20
30
40
50
0
40
80
120
160
200
0.3
0.5
0.7
0.9
1.1
1.3
1.5
80
10
5
1
.1
16
12
8
4
0
TC=+25°C
TJ=+150°C
SINGLE PULSE
10mS
1mS
100S
TJ=+150°C
TJ=+25°C
VDS=550V
VDS=220V
VDS=880V
I
D = 20A
20,000
10,000
1,000
100
10
200
100
10
1
OPERATIONHERE
LIMITEDBYRDS(ON)
I
D (A)
I
D (A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD = 733V
R
G = 5
T
J = 125°C
L = 100H
Eon
Eoff
tr
tf
SWITCHING
ENERGY
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t rand
t
f
(ns)
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
0
5
10 15 20 25 30 35 40 45 50
V
DD = 733V
I
D = 20A
T
J = 125°C
L = 100H
E
ON includes
diode reverse recovery.
td(on)
td(off)
Eon
Eoff
120
100
80
60
40
20
0
2500
2000
1500
1000
500
0
V
DD = 733V
R
G = 5
T
J = 125°C
L = 100H
V
DD = 733V
R
G = 5
T
J = 125°C
L = 100H
E
ON includes
diode reverse recovery.
70
60
50
40
30
20
10
0
2500
2000
1500
1000
500
0
相关PDF资料
PDF描述
APT11058B2FLL 20 A, 1100 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET
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