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参数资料
| 型号： | APT11058LFLL |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 1100 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封装： | TO-264(L), 3 PIN |
| 文件页数： | 5/5页 |
| 文件大小： | 166K |
| 代理商： | APT11058LFLL |
050-7181
Rev
A
4-2004
Typical Performance Curves
APT11058B2FLL_LFLL
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
These dimensions are equal to the TO-247 without the mounting hole.
Drain
2-Plcs.
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
3.10 (.122)
3.48 (.137)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
Drain
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
T-MAXTM (B2) Package Outline
TO-264 (L) Package Outline
IC
D.U.T.
APT30DF120
VCE
Figure 20, Inductive Switching Test Circuit
G
VDD
Switching Energy
Drain Current
DrainVoltage
GateVoltage T
J125°C
10%
t
d(on)
90%
5%
t
r
5%
10%
90%
t
d(off)
t
f
10%
0
Drain Current
DrainVoltage
GateVoltage
T
J125°C
Switching Energy
90%
相关PDF资料 |
PDF描述 |
|---|---|
| APT11058B2FLL | 20 A, 1100 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT11GF120KR | 25 A, 1200 V, N-CHANNEL IGBT, TO-220AB |
| APT11GF120KRG | 25 A, 1200 V, N-CHANNEL IGBT, TO-220AB |
| APT11GF120KR | 25 A, 1200 V, N-CHANNEL IGBT, TO-220AB |
| APT11GP60SA | 41 A, 600 V, N-CHANNEL IGBT, TO-263AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT11F80B | 功能描述:MOSFET N-CH 800V 12A TO-247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 8™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT11F80S | 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 800V 12A D3PAK |
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| APT11GF120BRDQ1 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:FAST IGBT & FRED |
| APT11GF120BRDQ1G | 功能描述:IGBT 1200V 25A 156W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
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