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参数资料
| 型号： | APT11GF120KRG |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 25 A, 1200 V, N-CHANNEL IGBT, TO-220AB |
| 封装： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 395K |
| 代理商： | APT11GF120KRG |
052-6213
Rev
C
1-2006
APT11GF120KR(G)
TYPICAL PERFORMANCE CURVES
V
GS(TH)
,THRESHOLD
VOLTAGE
V
CE
,COLLECTOR-TO-EMITTER
VOLTAGE
(V)
I C
,COLLECTOR
CURRENT
(A)
I C
,COLLECTOR
CURRENT
(A)
(NORMALIZED)
I C,
DC
COLLECTOR
CURRENT(A)
V
CE
,COLLECTOR-TO-EMITTER
VOLTAGE
(V)
V
GE
,GATE-TO-EMITTER
VOLTAGE
(V)
I C
,COLLECTOR
CURRENT
(A)
250s PULSE
TEST<0.5 % DUTY
CYCLE
30
25
20
15
10
5
0
30
25
20
15
10
5
0
6
5
4
3
2
1
0
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0
1
2
3
4
5
6
7
0
5
10
15
0
2
4
6
8
10
12
14
0
10
20
30
40
50
60
70
80
8
10
12
14
16
0
25
50
75
100
125
150
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
40
35
30
25
20
15
10
5
0
16
14
12
10
8
6
4
2
0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
35
30
25
20
15
10
5
0
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(TJ = 25°C)
FIGURE 2, Output Characteristics (TJ = 125°C)
V
GE, GATE-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
VGE, GATE-TO-EMITTER VOLTAGE (V)
TJ, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
TJ, JUNCTION TEMPERATURE (°C)
TC, CASE TEMPERATURE (°C)
FIGURE 7, Threshold Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
15V
13V
12V
9V
14V
8V
V
GE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
T
J = 125°C
T
J = 25°C
T
J = -55°C
T
J = 125°C
T
J = 25°C
T
J = -55°C
VGE = 15V
V
CE = 960V
V
CE = 600V
V
CE = 240V
IC = 8A
TJ = 25°C
T
J = 25°C.
250s PULSE TEST
<0.5 % DUTY CYCLE
I
C = 16A
I
C = 8A
I
C = 4A
11V
10V
I
C = 16A
I
C = 8A
I
C = 4A
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|---|---|
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