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参数资料
| 型号： | APT11GF120KRG |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 25 A, 1200 V, N-CHANNEL IGBT, TO-220AB |
| 封装： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 395K |
| 代理商： | APT11GF120KRG |
052-6213
Rev
C
1-2006
APT11GF120KR(G)
V
GE =15V,TJ=125°C
V
GE =15V,TJ=25°C
V
CE = 800V
R
G = 10
L = 100H
SWITCHING
ENERGY
LOSSES
(J)
E
ON2
,TURN
ON
ENERGY
LOSS
(J)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELAY
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(J)
E
OFF
,TURN
OFF
ENERGY
LOSS
(J)
t f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELAY
TIME
(ns)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
RG, GATE RESISTANCE (OHMS)
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
R
G = 10, L = 100H, VCE = 800V
V
CE = 800V
T
J = 25°C, or 125°C
R
G = 10
L = 100H
V
GE = 15V
T
J = 25 or 125°C,VGE = 15V
0
4
8
12
16
20
0
4
8
12
16
20
0
4
8
12
16
20
0
4
8
12
16
20
0
4
8
12
16
20
0
4
8
12
16
20
0
10
20
30
40
50
0
25
50
75
100
125
R
G = 10, L = 100H, VCE = 800V
10
8
6
4
2
0
12
10
8
6
4
2
0
2500
2000
1500
1000
500
0
4000
3500
3000
2500
2000
1500
1000
500
0
T
J = 125°C, VGE = 15V
T
J = 25°C, VGE = 15V
140
120
100
80
60
40
20
0
90
80
70
60
50
40
30
20
10
0
800
700
600
500
400
300
200
100
0
2500
2000
1500
1000
500
0
VCE = 800V
VGE = +15V
RG = 10
T
J = 125°C
T
J = 25°C
VCE = 800V
VGE = +15V
RG = 10
T
J = 125°C
T
J = 25°C
E
on2,16A
E
off,16A
E
on2,8A
E
off,8A
E
on2,4A
E
off,4A
VCE = 800V
VGE = +15V
TJ = 125°C
VCE = 800V
VGE = +15V
RG = 10
E
on2,16A
E
off,16A
E
on2,8A
E
off,8A
E
on2,4A
E
off,4A
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