- 您现在的位置：买卖IC网 > PDF目录51262 > APT11GF120KRG 25 A, 1200 V, N-CHANNEL IGBT, TO-220AB PDF资料下载
参数资料
| 型号： | APT11GF120KRG |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 25 A, 1200 V, N-CHANNEL IGBT, TO-220AB |
| 封装： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件页数： | 5/6页 |
| 文件大小： | 395K |
| 代理商： | APT11GF120KRG |
052-6213
Rev
C
1-2006
APT11GF120KR(G)
TYPICAL PERFORMANCE CURVES
1.00
0.80
0.60
0.40
0.20
0
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
0.3
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10-5
10-4
10-3
10-2
10-1
1.0
1,000
500
100
50
10
25
20
15
10
5
0
C,
CAPACITANCE
(
P
F)
I C
,COLLECTOR
CURRENT
(A)
V
CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
V
CE, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18,Minimim Switching Safe Operating Area
0
10
20
30
40
50
0
200 400
600
800 1000 1200 1400
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
0
2
4
6
8
10
12
14
16
F
MAX
,OPERATING
FREQUENCY
(kHz)
I
C, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
TJ = 125°C
D = 50 %
VCE = 800V
RG = 4.3
160
100
50
10
5
1
0.5
0.1
0.05
F
max
= min (f
max, fmax2)
0.05
f
max1 = t
d(on) + tr + td(off) + tf
P
diss - Pcond
E
on2 + Eoff
f
max2 =
P
diss =
T
J - TC
RθJC
C
res
C
ies
C
oes
D = 0.9
0.7
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t2
t2
t1
P
DM
Note:
0.437
0.363
0.00221
0.0432
Power
(watts)
RC MODEL
Junction
temp. (°C)
Case temperature. (°C)
TC = 75°C
TC = 100°C
相关PDF资料 |
PDF描述 |
|---|---|
| APT11GF120KR | 25 A, 1200 V, N-CHANNEL IGBT, TO-220AB |
| APT11GP60SA | 41 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| APT11GP60KG | 41 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| APT11GP60SA | 41 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| APT11GP60K | 41 A, 600 V, N-CHANNEL IGBT, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT11GP60BDQB | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT11GP60BDQBG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - PT POWER MOS 7 - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT11GP60K | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT11GP60KG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - PT POWER MOS 7 - SINGLE - Rail/Tube |
| APT11GP60SA | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
发布紧急采购，3分钟左右您将得到回复。