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参数资料
| 型号： | APT11GF120KRG |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 25 A, 1200 V, N-CHANNEL IGBT, TO-220AB |
| 封装： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件页数： | 6/6页 |
| 文件大小： | 395K |
| 代理商： | APT11GF120KRG |
052-6213
Rev
C
1-2006
APT11GF120KR(G)
Figure 22, Turn-on Switching Waveforms and Denitions
Figure 23, Turn-off Switching Waveforms and Denitions
T
J = 125°C
Switching Energy
5%
10%
t
d(on)
90%
10%
t
r
5%
T
J = 125°C
Switching Energy
0
90%
t
d(off)
10%
t
f
90%
Collector Current
Collector Voltage
Gate Voltage
Collector Voltage
Collector Current
Gate Voltage
APT15DQ120
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
Emitter
10.66 (.420)
9.66 (.380)
5.33 (.210)
4.83 (.190)
14.73 (.580)
12.70 (.500)
1.01 (.040) 3-Plcs.
0.83 (.033)
2.79 (.110)
2.29 (.090)
4.82 (.190)
3.56 (.140)
1.39 (.055)
0.51 (.020)
4.08 (.161) Dia.
3.54 (.139)
Dimensions in Millimeters and (Inches)
Gate
Collector
6.85 (.270)
5.85 (.230)
1.77 (.070) 3-Plcs.
1.15 (.045)
2.92 (.115)
2.04 (.080)
3.42 (.135)
2.54 (.100)
0.50 (.020)
0.41 (.016)
5.33 (.210)
4.83 (.190)
Drain
12.192 (.480)
9.912 (.390)
3.683 (.145)
MAX.
TO-220 (K) Package Outline
e3 100% Sn
IC
A
D.U.T.
VCE
Figure 21, Inductive Switching Test Circuit
VCC
相关PDF资料 |
PDF描述 |
|---|---|
| APT11GF120KR | 25 A, 1200 V, N-CHANNEL IGBT, TO-220AB |
| APT11GP60SA | 41 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| APT11GP60KG | 41 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| APT11GP60SA | 41 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| APT11GP60K | 41 A, 600 V, N-CHANNEL IGBT, TO-220AB |
相关代理商/技术参数 |
参数描述 |
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| APT11GP60BDQB | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT11GP60BDQBG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - PT POWER MOS 7 - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT11GP60K | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT11GP60KG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - PT POWER MOS 7 - SINGLE - Rail/Tube |
| APT11GP60SA | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
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