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参数资料
| 型号： | APT15GP60BDL |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 56 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封装： | ROHS COMPLIANT, TO-247, 3 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 188K |
| 代理商： | APT15GP60BDL |
052-6356
Rev
A
7-2008
APT15GP60BDL(G)
T
J = 125°C, VGE = 10V or 15V
T
J = 25°C, VGE = 10V or 15V
V
CE = 400V
R
G = 5Ω
L = 100 μH
V
GE =15V,TJ=125°C
V
GE= 15V
V
GE= 10V
V
GE =10V,TJ=125°C
V
GE =10V,TJ=25°C
V
GE =15V,TJ=25°C
T
J = 25°C, VGE = 10V or 15V
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G, GATE RESISTANCE (OHMS)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
R
G =5Ω, L = 100
μ
H, V
CE = 400V
R
G =5Ω, L = 100
μ
H, V
CE = 400V
V
CE = 400V
L = 100 μH
R
G = 5 Ω
T
J = 25 or 125°C,VGE = 15V
T
J = 25 or 125°C,VGE = 10V
V
CE = 400V
V
GE = +15V
R
G = 5 Ω
SWITCHING
ENERGY
LOSSES
(
μ
J)
E
ON2
,TURN
ON
ENERGY
LOSS
(
μ
J)
t
r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELA
Y
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(
μ
J)
E
OFF
,TURN
OFF
ENERGY
LOSS
(
μ
J)
t
f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELA
Y
TIME
(ns)
V
CE = 400V
V
GE = +15V
T
J = 125°C
V
CE = 400V
L = 100 μH
R
G = 5 Ω
T
J =125°C, V
GE=15V
T
J = 125°C, VGE = 10V or 15V
T
J =125°C,V
GE=10V
T
J = 25°C, V
GE=10V
T
J = 25°C, V
GE=15V
5
10
15
20
25
30
5
10
15
20
25
30
5
10
15
20
25
30
5
10
15
20
25
30
0
5
10
15
20
25
30
5
10
15
20
25
30
0
10
20
30
40
50
-50
-25
0
25
50
75
100
125
18
16
14
12
10
8
6
4
2
0
30
25
20
15
10
5
0
700
600
500
400
300
200
100
0
900
800
700
600
500
400
300
200
100
0
80
70
60
50
40
30
20
10
0
100
80
60
40
20
0
700
600
500
400
300
200
100
0
700
600
500
400
300
200
100
0
E
off 30A
E
on2 30A
E
on2 7.5A
E
off 15A
E
on2 15A
E
off 7.5A
E
on2 7.5A
E
off 15A
E
on2 15A
E
on2 30A
E
off 30A
E
off 7.5A
V
CE = 400V
T
J = 25°C or 125°C
R
G = 5Ω
L = 100 μH
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT15GP60BDLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:IGBT 600V 56A TO-247 制造商:Microsemi Corporation 功能描述:IGBT 600V 56A 250W TO247 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT15GP60BDQ1 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT15GP60BDQ1G | 功能描述:IGBT 600V 56A 250W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:POWER MOS 7® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT15GP60BG | 功能描述:IGBT 600V 56A 250W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:POWER MOS 7® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT15GP60K | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
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