参数资料
型号: APT15GP60BDL
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: IGBT 晶体管
英文描述: 56 A, 600 V, N-CHANNEL IGBT, TO-247AD
封装: ROHS COMPLIANT, TO-247, 3 PIN
文件页数: 5/8页
文件大小: 188K
代理商: APT15GP60BDL
052-6356
Rev
A
7-2008
TYPICAL PERFORMANCE CURVES
APT15GP60BDL(G)
0.60
0.50
0.40
0.30
0.20
0.10
0
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
Z
q
JC
,THERMAL
IMPEDANCE
(°C/W)
0.3
0.9
0.7
0.1
0.05
0.5
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10-5
10-4
10-3
10-2
10-1
1.0
4,000
1,000
500
100
50
10
70
60
50
40
30
20
10
0
C,
CAP
ACIT
ANCE
(
P
F)
I C
,COLLECT
OR
CURRENT
(A)
V
CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
V
CE, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18, Minimim Switching Safe Operating Area
0
10
20
30
40
50
0
100
200
300
400
500
600
700
C
ies
C
oes
max
max1
max 2
max1
d (on )rd(off )
f
diss
cond
max 2
on 2
off
JC
diss
JC
Fmin(f
, f
)
0.05
f
tt
t
PP
f
EE
TT
P
R θ
=
++
+
=
+
=
C
res
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
5
10
15 20
25
30
35
40
45
50
292
100
50
10
F
MAX
,OPERA
TING
FREQUENCY
(kHz)
I
C, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
T
J = 125°C
T
C = 75°C
D = 50 %
V
CE = 400V
R
G = 5
W
0.216
0.284
0.0060
0.161
Dissipated Power
(Watts)
T
J (C)
T
C (C)
Z
EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Z
EXT
相关PDF资料
PDF描述
APT20M11JVR 175 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
APT20N60CC3 14 A, 600 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
APT30GP60JDQ1G 67 A, 600 V, N-CHANNEL IGBT
APT30GT60BR 64 A, 600 V, N-CHANNEL IGBT, TO-247AD
APT30M36JFLL 76 A, 300 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET
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