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参数资料
| 型号： | APT15GP60BSC |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 56 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 7/8页 |
| 文件大小： | 216K |
| 代理商： | APT15GP60BSC |
050-7448
Rev
A
7-2004
APT15GP60BSC
TYPICAL PERFORMANCE CURVES
SILICON CARBIDE SCHOTTKY RECTIFIER DIODE
Characteristic / Test Conditions
Maximum Average Forward Current (T
C = 130°C, Duty Cycle = 0.5)
RMS Forward Current
Non-Repetitive Forward Surge Current (T
J = 25°C, tp = 10s)
Symbol
I
F(AV)
I
F(RMS)
I
FSM
Symbol
V
F
Characteristic / Test Conditions
I
F = 15A
Forward Voltage
I
F = 30A
I
F = 15A, TJ = 175°C
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Amps
UNIT
Volts
MIN
TYP
MAX
1.9
2.9
3.1
APT15GP60BSC
10
19
250
DYNAMICCHARACTERISTICS
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
MIN
TYP
MAX
-
50
-28
N/A
50
Symbol
C
Q
C
t
fr
t
rr
dv/dt
Characteristic / Test Conditions
Capacitance (V
R = 400V, TC = 25°C, F = 1 MHz)
Total Capacitive Charge (V
R = 600V, IF = 20A, diF/dt = 500A/s, TC = 25°C)
Forward Recovery Time 1
Reverse Recovery Time 1
Peak Diode Recovery (V
R = 480V, di/dt = 1000A/s, TC = 25°C)
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(seconds)
FIGURE 25a.MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvs.PULSEDURATION
1.20
1.10
0.80
0.60
0.40
0.20
0
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.5
SINGLE PULSE
0.1
0.3
0.7
0.9
0.05
FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL
0.688
°C/W
0.412
°C/W
0.00215 J/
°C
0.0572 J/
°C
Power
(watts)
RC MODEL
Junction
temp(
°C)
Case temperature(
°C)
1 As a majority carrier device, there is no reverse recovery charge.
zero recoveryTM, is a Trademark of CREE INC.
相关PDF资料 |
PDF描述 |
|---|---|
| APT15GP60B | 56 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT15GP60S | 56 A, 600 V, N-CHANNEL IGBT |
| APT15GP60KG | 56 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| APT15GP60K | 56 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| APT15GP60K | 56 A, 600 V, N-CHANNEL IGBT, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT15GP60K | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT15GP60KG | 功能描述:IGBT 600V 56A 250W TO220 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:POWER MOS 7® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT15GP60S | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:POWER MOS 7 IGBT |
| APT15GP90B | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. |
| APT15GP90B_06 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs |
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