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参数资料
| 型号： | APT15GP60BSC |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 56 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 8/8页 |
| 文件大小： | 216K |
| 代理商： | APT15GP60BSC |
050-7448
Rev
A
7-2004
APT15GP60BSC
I F
,(AV)
FORWARD
CURRENT
I F
,FORWARD
CURRENT
(A)
C
J,
JUNCTION
CAPACITANCE
I r,
REVERSE
CURRENT
(pF)
(
A)
TJ = 25°C
TJ = 75°C
TJ = 125°C
TJ = 175°C
TJ = -55°C
TJ =25°C
VR = 400V
TJ = 25°C
TJ = 75°C
TJ = 125°C
TJ = 175°C
60
50
40
30
20
10
0
20
18
16
14
12
10
8
6
4
2
0
200
160
120
80
40
0
600
500
400
300
200
100
0
1234567
8
0
200
400
600
800
25
50
75
100
125
150
175
.3
1
10
100
400
T0-247 Package Outline
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
3.55 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Dimensions in Millimeters and (Inches)
2-Plcs.
Collector
(Cathode)
Emitter
(Anode)
Gate
Collector (Cathode)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
VF,ANODE-TO-CATHODEVOLTAGE(V)
VR, CATHODE-TO-ANODE VOLTAGE (V)
Figure 26. Forward Current vs. Forward Voltage
Figure 27. Reverse Current vs. Reverse Voltage
Case Temperature (°C)
VR, REVERSE VOLTAGE (V)
Figure 28. Current Derating
Figure 29. Junction Capacitance vs. Reverse Voltage
相关PDF资料 |
PDF描述 |
|---|---|
| APT15GP60B | 56 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT15GP60S | 56 A, 600 V, N-CHANNEL IGBT |
| APT15GP60KG | 56 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| APT15GP60K | 56 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| APT15GP60K | 56 A, 600 V, N-CHANNEL IGBT, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT15GP60K | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT15GP60KG | 功能描述:IGBT 600V 56A 250W TO220 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:POWER MOS 7® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT15GP60S | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:POWER MOS 7 IGBT |
| APT15GP90B | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. |
| APT15GP90B_06 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs |
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