- 您现在的位置：买卖IC网 > PDF目录51264 > APT30GS60BRDL (MICROSEMI POWER PRODUCTS GROUP) 54 A, 600 V, N-CHANNEL IGBT, TO-247AD PDF资料下载
参数资料
| 型号： | APT30GS60BRDL |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 54 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封装： | ROHS COMPLIANT, TO-247, 3 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 247K |
| 代理商： | APT30GS60BRDL |
V
CE(ON)
, COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics
FIGURE 2, Output Characteristics
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
FIGURE 4, On State Voltage vs Gate-to- Emitter Voltage
T
J
, Junction Temperature (°C)
GATE CHARGE (nC)
FIGURE 5, On State Voltage vs Junction Temperature
FIGURE 6, Gate Charge
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
T
C
, CASE TEMPERATURE (°C)
FIGURE 7, Capacitance vs Collector-To-Emitter Voltage
FIGURE 8, DC Collector Current vs Case Temperature
C
,CAP
A
CIT
ANCE
(
P
F)
V
CE
,COLLECT
OR-T
O-EMITTER
V
O
LT
A
GE
(V)
I C
,COLLECT
OR
CURRENT
(A)
I C
,COLLECT
OR
CURRENT
(A)
I
C,
DC
COLLECT
OR
CURRENT(A)
V
GE
,GA
TE-T
O-EMITTER
V
O
LT
A
GE
(V)
V
CE
,COLLECT
OR-T
O-EMITTER
V
O
LT
A
GE
(V)
I C
,COLLECT
OR
CURRENT
(A)
0
1
2
3
4
5
6
7
8
0
5
10
15
20
25
30
0
2
4
6
8
10
12
14
6
8
10
12
14
16
0
25
50
75
100
125
150
0
20
40
60
80
100 120 140 160
0
100
200
300
400
500
600
25
50
75
100
125
150
120
100
80
60
40
20
0
120
100
80
60
40
20
0
5
4
3
2
1
0
2000
1000
100
10
120
100
80
60
40
20
0
6
5
4
3
2
1
0
16
14
12
10
8
6
4
2
0
60
50
40
30
20
10
0
250s PULSE
TEST<0.5 % DUTY
CYCLE
V
CE
= 480V
V
CE
= 300V
V
CE
= 120V
250s PULSE
TEST<0.5 % DUTY
CYCLE
12V
10V
9V
8V
11V
6V
T
J = 125°C
T
J = 25°C
I
C
= 15A
I
C
= 30A
I
C
= 60A
V
GE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
I
C
= 100A
I
C
= 50A
I
C
= 25A
VGE = 15V
T
J
= 125°C
T
J
= 25°C
T
J
= 150°C
T
J
= 125°C
T
J = 25°C.
250s PULSE TEST
<0.5 % DUTY CYCLE
C
oes
C
ies
C
res
V
GE
= 13 & 15V
T
J = -55°C
I
C
= 60A
I
C
= 30A
I
C
= 15A
T
J = 25°C.
250s PULSE TEST
<0.5 % DUTY CYCLE
TYPICAL PERFORMANCE CURVES
APT30GS60BRDL(G)
052-6353
Re
v
A
7-2008
相关PDF资料 |
PDF描述 |
|---|---|
| APT30GT60KR | 64 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| APT30GT60KRG | 64 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| APT30M30JFLL | 88 A, 300 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT30M30LFLL | 100 A, 300 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT30M30B2FLL | 100 A, 300 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT30GS60BRDLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT30GS60BRDQ2 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode |
| APT30GS60BRDQ2G | 功能描述:IGBT 600V 54A 250W SOT227 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT30GS60KR | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT |
| APT30GS60KRG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - NPT HIGH FREQUENCY - SIN - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
发布紧急采购，3分钟左右您将得到回复。